An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices
This paper presents alternative techniques of polysilicon doping using POCl3 and ion implantation for gate electrode of sub-micron CMOS/BiCMOS devices during the technology transfer to local fab. The in-situ doping sheet resistance (Rs) value is use as a reference at range of 20 to 25 Ω/□. The polys...
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| Main Authors: | , , |
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2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5327 |
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