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An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices

This paper presents alternative techniques of polysilicon doping using POCl3 and ion implantation for gate electrode of sub-micron CMOS/BiCMOS devices during the technology transfer to local fab. The in-situ doping sheet resistance (Rs) value is use as a reference at range of 20 to 25 Ω/□. The polys...

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Main Authors: Omar, A., Kamariah, S., Ahmad, I.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5327
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spelling my.uniten.dspace-53272017-11-15T02:57:33Z An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices Omar, A. Kamariah, S. Ahmad, I. This paper presents alternative techniques of polysilicon doping using POCl3 and ion implantation for gate electrode of sub-micron CMOS/BiCMOS devices during the technology transfer to local fab. The in-situ doping sheet resistance (Rs) value is use as a reference at range of 20 to 25 Ω/□. The polysilicon gate sheet resistance (Rs) obtain from both techniques were analyzed. The result shows that both techniques give the required polysilicon gate sheet resistance at 24 to 30 Ω/□ and close to the range of using in-situ doping technique. The Rs for both techniques can be improved further by increasing the POCl3 process temperature and higher the ion implantation dose rate. However, the ion implantation technique were recommended to be used at local fab because of it will eliminate the used of using high temperature treatment process as well as reducing the thermal effect to the device. © 2004 IEEE. 2017-11-15T02:57:33Z 2017-11-15T02:57:33Z 2004 http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5327
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description This paper presents alternative techniques of polysilicon doping using POCl3 and ion implantation for gate electrode of sub-micron CMOS/BiCMOS devices during the technology transfer to local fab. The in-situ doping sheet resistance (Rs) value is use as a reference at range of 20 to 25 Ω/□. The polysilicon gate sheet resistance (Rs) obtain from both techniques were analyzed. The result shows that both techniques give the required polysilicon gate sheet resistance at 24 to 30 Ω/□ and close to the range of using in-situ doping technique. The Rs for both techniques can be improved further by increasing the POCl3 process temperature and higher the ion implantation dose rate. However, the ion implantation technique were recommended to be used at local fab because of it will eliminate the used of using high temperature treatment process as well as reducing the thermal effect to the device. © 2004 IEEE.
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author Omar, A.
Kamariah, S.
Ahmad, I.
spellingShingle Omar, A.
Kamariah, S.
Ahmad, I.
An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices
author_facet Omar, A.
Kamariah, S.
Ahmad, I.
author_sort Omar, A.
title An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices
title_short An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices
title_full An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices
title_fullStr An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices
title_full_unstemmed An alternative doping technique of polysilicon gate for sub-micron CMOS/BiCMOS devices
title_sort alternative doping technique of polysilicon gate for sub-micron cmos/bicmos devices
publishDate 2017
url http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5327
_version_ 1644493658592903168
score 13.211869

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