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Pulse power failure model of power MOSFET due to electrical overstress using tasca method

The objective of this research is to study electrical overstress (EOS) defect at gate oxide for various pulse widths in n-channel Power Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Moreover, this research also intent to develop power failure model for n-channel power MOSFET according...

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Main Authors: Ismail, N.S., Ahmad, I., Husain, H., Chuah, S.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5304
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spelling my.uniten.dspace-53042017-11-15T02:57:25Z Pulse power failure model of power MOSFET due to electrical overstress using tasca method Ismail, N.S. Ahmad, I. Husain, H. Chuah, S. The objective of this research is to study electrical overstress (EOS) defect at gate oxide for various pulse widths in n-channel Power Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Moreover, this research also intent to develop power failure model for n-channel power MOSFET according to Tasca method. Electrical overstress does not have EOS standards and quantitative EOS design objectives to tackle this problem. Square pulse testing is used in this research due to easy to generate and simple to analyze. Time-to-failure (tf) is taken for power profiles modeling by observing abrupt drop in voltage waveform seen on oscilloscope. Tasca derived the thermal model by regarded the defect area as a sphere immersed in an infinite medium at ambient temperature. Result from failure analysis on all failed units had shown that hot spot formations begin at gate runner of the die and pulse stress given on VGS has cause gate oxide breakdown. Pulse power failure model for device n-channel power MOSFET can be obtained using Tasca method. ©2006 IEEE. 2017-11-15T02:57:25Z 2017-11-15T02:57:25Z 2006 http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5304
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description The objective of this research is to study electrical overstress (EOS) defect at gate oxide for various pulse widths in n-channel Power Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Moreover, this research also intent to develop power failure model for n-channel power MOSFET according to Tasca method. Electrical overstress does not have EOS standards and quantitative EOS design objectives to tackle this problem. Square pulse testing is used in this research due to easy to generate and simple to analyze. Time-to-failure (tf) is taken for power profiles modeling by observing abrupt drop in voltage waveform seen on oscilloscope. Tasca derived the thermal model by regarded the defect area as a sphere immersed in an infinite medium at ambient temperature. Result from failure analysis on all failed units had shown that hot spot formations begin at gate runner of the die and pulse stress given on VGS has cause gate oxide breakdown. Pulse power failure model for device n-channel power MOSFET can be obtained using Tasca method. ©2006 IEEE.
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author Ismail, N.S.
Ahmad, I.
Husain, H.
Chuah, S.
spellingShingle Ismail, N.S.
Ahmad, I.
Husain, H.
Chuah, S.
Pulse power failure model of power MOSFET due to electrical overstress using tasca method
author_facet Ismail, N.S.
Ahmad, I.
Husain, H.
Chuah, S.
author_sort Ismail, N.S.
title Pulse power failure model of power MOSFET due to electrical overstress using tasca method
title_short Pulse power failure model of power MOSFET due to electrical overstress using tasca method
title_full Pulse power failure model of power MOSFET due to electrical overstress using tasca method
title_fullStr Pulse power failure model of power MOSFET due to electrical overstress using tasca method
title_full_unstemmed Pulse power failure model of power MOSFET due to electrical overstress using tasca method
title_sort pulse power failure model of power mosfet due to electrical overstress using tasca method
publishDate 2017
url http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5304
_version_ 1644493651861045248
score 13.211869

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