Pulse power failure model of power MOSFET due to electrical overstress using tasca method
The objective of this research is to study electrical overstress (EOS) defect at gate oxide for various pulse widths in n-channel Power Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Moreover, this research also intent to develop power failure model for n-channel power MOSFET according...
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| Main Authors: | , , , |
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2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5304 |
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