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Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process param...

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Main Authors: Salehuddin, F., Ahmad, I., Hamid, F.A., Zaharim, A., Elgomati, H.A., Majlis, B.Y., Apte, P.R.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5242
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spelling my.uniten.dspace-52422017-11-15T02:56:57Z Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method Salehuddin, F. Ahmad, I. Hamid, F.A. Zaharim, A. Elgomati, H.A. Majlis, B.Y. Apte, P.R. In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm. 2017-11-15T02:56:57Z 2017-11-15T02:56:57Z 2011 http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5242
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm.
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author Salehuddin, F.
Ahmad, I.
Hamid, F.A.
Zaharim, A.
Elgomati, H.A.
Majlis, B.Y.
Apte, P.R.
spellingShingle Salehuddin, F.
Ahmad, I.
Hamid, F.A.
Zaharim, A.
Elgomati, H.A.
Majlis, B.Y.
Apte, P.R.
Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
author_facet Salehuddin, F.
Ahmad, I.
Hamid, F.A.
Zaharim, A.
Elgomati, H.A.
Majlis, B.Y.
Apte, P.R.
author_sort Salehuddin, F.
title Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
title_short Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
title_full Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
title_fullStr Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
title_full_unstemmed Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method
title_sort optimization of halo structure effects in 45nm p-type mosfets device using taguchi method
publishDate 2017
url http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5242
_version_ 1644493625804980224
score 13.222552

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