Development of process parameters for 22 nm PMOS using 2-D analytical modeling
The complementary metal-oxide-semiconductor field effect transistor (CMOSFET) has become major challenge to scaling and integration. Innovation in transistor structures and integration of novel materials are necessary to sustain this performance trend. CMOS variability in the scaling technology beco...
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| Main Authors: | , , , , |
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2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5199 |
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