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Process characterization of 32nm semi analytical bilayer graphene-based mosfet

Volume :78, Issue No :-, Article ID :20167801016, Page Start :1, Page End :7, ISSN :-

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Main Authors: Ibrahim bin Ahmad, Prof. Dr, Ker Pin Jern, Mr., Noor Faizah Zainal Abidin, P. Susthitha Menon N V Visvanathan
Format: Article
Language:en_US
Published: 2017
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spelling my.uniten.dspace-492018-02-07T02:09:58Z Process characterization of 32nm semi analytical bilayer graphene-based mosfet Ibrahim bin Ahmad, Prof. Dr Ker Pin Jern, Mr. Noor Faizah Zainal Abidin P. Susthitha Menon N V Visvanathan Volume :78, Issue No :-, Article ID :20167801016, Page Start :1, Page End :7, ISSN :- This paper presents an inclusive study and analysis of graphene-based MOSFET device at 32nm gate length. The analysis was based on top-gated structure which utilized Hafnium Dioxide (HfO2) dielectrics and metal gate. The same conventional process flows of a transistor were applied except the deposition of bilayer graphene as a channel. The analytical expression of the channel potential includes all relevant physics of bilayer graphene and by assuming that this device displays an ideal ohmic contact and functioned at a ballistic transport. Based on the designed transistor, the on-state current (ION) for both GNMOS and GPMOS shows a promising performance where the value is 982.857uA/um and 99.501uA/um respectively. The devices also possess a very small leakage current (IOFF) of 0.289578nA/um for GNMOS and 0.130034nA/um for GPMOS as compared to the conventional SiO2/Poly-Si and high-k metal gate transistors. However, the devices suffer an inappropriate subthreshold swing (SS) and high value of drain induced barrier lowering (DIBL). 2017-05-11T07:00:27Z 2017-05-11T07:00:27Z 2016-10 Article 10.1051/matecconf/20167801016 en_US Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET. MATEC Web of Conferences, 78, [01016
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
language en_US
description Volume :78, Issue No :-, Article ID :20167801016, Page Start :1, Page End :7, ISSN :-
format Article
author Ibrahim bin Ahmad, Prof. Dr
Ker Pin Jern, Mr.
Noor Faizah Zainal Abidin
P. Susthitha Menon N V Visvanathan
spellingShingle Ibrahim bin Ahmad, Prof. Dr
Ker Pin Jern, Mr.
Noor Faizah Zainal Abidin
P. Susthitha Menon N V Visvanathan
Process characterization of 32nm semi analytical bilayer graphene-based mosfet
author_facet Ibrahim bin Ahmad, Prof. Dr
Ker Pin Jern, Mr.
Noor Faizah Zainal Abidin
P. Susthitha Menon N V Visvanathan
author_sort Ibrahim bin Ahmad, Prof. Dr
title Process characterization of 32nm semi analytical bilayer graphene-based mosfet
title_short Process characterization of 32nm semi analytical bilayer graphene-based mosfet
title_full Process characterization of 32nm semi analytical bilayer graphene-based mosfet
title_fullStr Process characterization of 32nm semi analytical bilayer graphene-based mosfet
title_full_unstemmed Process characterization of 32nm semi analytical bilayer graphene-based mosfet
title_sort process characterization of 32nm semi analytical bilayer graphene-based mosfet
publishDate 2017
_version_ 1644492143828402176
score 13.211869

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