Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm
Lattice-mismatched InGaAs has appeared to be emerging semiconductor materials for sensors and photovoltaic applications. The absorption coefficients of the materials are crucial in designing high-performance semiconductor devices. Nevertheless, the absorption coefficient of lattice-mismatched InGaAs...
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| Main Authors: | , , , , , , , , , |
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Elsevier Ltd
2024
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