Optimization of process parameters for Si lateral PIN photodiode
This paper is about four optimization factors of process parameters, namely the intrinsic region length, photoabsorption layer thickness, the incident optical power and the bias voltage in a Si lateral pin-photodiode so as to obtain high frequency response and responsivity. Optimization of these par...
保存先:
| 主要な著者: | , , , |
|---|---|
| その他の著者: | |
| フォーマット: | 論文 |
| 出版事項: |
2023
|
| 主題: | |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|