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Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device

In this paper, we investigate the impact of process parameter like halo structure on threshold voltage (VTH) and leakage current (I Leak) in 45nm NMOS device. The settings of process parameters were determined by using Taguchi experimental design method. Besides halo implant, the other process param...

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Bibliographic Details
Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
Other Authors: 36239165300
Format: Conference paper
Published: 2023
Subjects:
Leakage Current
NMOS Device
Taguchi Method
Threshold Voltage
Growth temperature
Leakage currents
Optimization
Simulators
Taguchi methods
Device simulators
Halo implants
HALO structure
NMOS devices
Oxide growth
Process parameters
Process simulators
Response characteristic
Taguchi
Taguchi experimental-design method
Threshold voltage
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