Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device
In this paper, we investigate the impact of process parameter like halo structure on threshold voltage (VTH) and leakage current (I Leak) in 45nm NMOS device. The settings of process parameters were determined by using Taguchi experimental design method. Besides halo implant, the other process param...
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my.uniten.dspace-296292023-12-28T15:17:48Z Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. 36239165300 12792216600 6603573875 15119466900 Leakage Current NMOS Device Taguchi Method Threshold Voltage Growth temperature Leakage currents Optimization Simulators Taguchi methods Device simulators Halo implants HALO structure NMOS devices Oxide growth Process parameters Process simulators Response characteristic Taguchi Taguchi experimental-design method Threshold voltage In this paper, we investigate the impact of process parameter like halo structure on threshold voltage (VTH) and leakage current (I Leak) in 45nm NMOS device. The settings of process parameters were determined by using Taguchi experimental design method. Besides halo implant, the other process parameters which used were Source/Drain (S/D) implant and oxide growth temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to threshold voltage and leakage current are oxide growth temperature (71%) and S/D implant dose (47%) respectively. Whereas the second ranking factor affecting VTH and ILeak are halo implant tilt (15%) and halo implant dose (35%) respectively. As conclusions, S/D implant dose and oxide growth temperature have the strongest effect on the response characteristics. The results show that the VTH for NMOS device equal to 0.150V at tox= 1.1nm. The results show that ILeak after optimizations approaches is 51.8?A/m. � 2010 IEEE. Final 2023-12-28T07:17:48Z 2023-12-28T07:17:48Z 2010 Conference paper 10.1109/APCCAS.2010.5774934 2-s2.0-79959277569 https://www.scopus.com/inward/record.uri?eid=2-s2.0-79959277569&doi=10.1109%2fAPCCAS.2010.5774934&partnerID=40&md5=569e86b1e1b1caaf3b07dec368cb8273 https://irepository.uniten.edu.my/handle/123456789/29629 5774934 1147 1150 Scopus |
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Leakage Current NMOS Device Taguchi Method Threshold Voltage Growth temperature Leakage currents Optimization Simulators Taguchi methods Device simulators Halo implants HALO structure NMOS devices Oxide growth Process parameters Process simulators Response characteristic Taguchi Taguchi experimental-design method Threshold voltage |
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Leakage Current NMOS Device Taguchi Method Threshold Voltage Growth temperature Leakage currents Optimization Simulators Taguchi methods Device simulators Halo implants HALO structure NMOS devices Oxide growth Process parameters Process simulators Response characteristic Taguchi Taguchi experimental-design method Threshold voltage Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device |
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In this paper, we investigate the impact of process parameter like halo structure on threshold voltage (VTH) and leakage current (I Leak) in 45nm NMOS device. The settings of process parameters were determined by using Taguchi experimental design method. Besides halo implant, the other process parameters which used were Source/Drain (S/D) implant and oxide growth temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to threshold voltage and leakage current are oxide growth temperature (71%) and S/D implant dose (47%) respectively. Whereas the second ranking factor affecting VTH and ILeak are halo implant tilt (15%) and halo implant dose (35%) respectively. As conclusions, S/D implant dose and oxide growth temperature have the strongest effect on the response characteristics. The results show that the VTH for NMOS device equal to 0.150V at tox= 1.1nm. The results show that ILeak after optimizations approaches is 51.8?A/m. � 2010 IEEE. |
| author2 |
36239165300 |
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36239165300 Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. |
| format |
Conference paper |
| author |
Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. |
| author_sort |
Salehuddin F. |
| title |
Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device |
| title_short |
Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device |
| title_full |
Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device |
| title_fullStr |
Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device |
| title_full_unstemmed |
Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device |
| title_sort |
impact of halo structure on threshold voltage and leakage current in 45nm nmos device |
| publishDate |
2023 |
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1806425642621730816 |
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13.211869 |