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Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET

In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of...

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Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A., Elgomati H.A., Majlis B.Y.
Other Authors: 36239165300
Format: Conference Paper
Published: 2023
Subjects:
Experiments
Metallic compounds
MOS devices
Semiconductor devices
Signal to noise ratio
Taguchi methods
Threshold voltage
Vanadium
Control factors
Device simulators
Halo implants
Implant energy
Metal oxide semiconductor device
MOS-FET
N-channel
NMOS devices
Noise factor
Orthogonal array
Performance characteristics
Process parameter variations
Process parameters
Process simulators
Response characteristic
Signal to noise
Simulators
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spelling my.uniten.dspace-295962024-04-17T10:35:42Z Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. Elgomati H.A. Majlis B.Y. 36239165300 12792216600 6603573875 15119466900 36536722700 6603071546 Experiments Metallic compounds MOS devices Semiconductor devices Signal to noise ratio Taguchi methods Threshold voltage Vanadium Control factors Device simulators Halo implants Implant energy Metal oxide semiconductor device MOS-FET N-channel NMOS devices Noise factor Orthogonal array Performance characteristics Process parameter variations Process parameters Process simulators Response characteristic Signal to noise Simulators In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of a device. In this paper, there are eight process parameters (control factors) were varied for 2 and 3 levels to performed 18 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, S/D implant energy was identified as one of the process parameter that has the strongest effect on the response characteristics. While the halo implant dose was identified as an adjustment factor to get the nominal values of VTH for NMOS device equal to 0.289V at tox 1.06nm. � 2011 IEEE. Final 2023-12-28T07:05:44Z 2023-12-28T07:05:44Z 2011 Conference Paper 10.1109/RSM.2011.6088294 2-s2.0-83755173896 https://www.scopus.com/inward/record.uri?eid=2-s2.0-83755173896&doi=10.1109%2fRSM.2011.6088294&partnerID=40&md5=f365f90e8861d93fdcc67332c21d6e73 https://irepository.uniten.edu.my/handle/123456789/29596 6088294 70 74 Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic Experiments
Metallic compounds
MOS devices
Semiconductor devices
Signal to noise ratio
Taguchi methods
Threshold voltage
Vanadium
Control factors
Device simulators
Halo implants
Implant energy
Metal oxide semiconductor device
MOS-FET
N-channel
NMOS devices
Noise factor
Orthogonal array
Performance characteristics
Process parameter variations
Process parameters
Process simulators
Response characteristic
Signal to noise
Simulators
spellingShingle Experiments
Metallic compounds
MOS devices
Semiconductor devices
Signal to noise ratio
Taguchi methods
Threshold voltage
Vanadium
Control factors
Device simulators
Halo implants
Implant energy
Metal oxide semiconductor device
MOS-FET
N-channel
NMOS devices
Noise factor
Orthogonal array
Performance characteristics
Process parameter variations
Process parameters
Process simulators
Response characteristic
Signal to noise
Simulators
Salehuddin F.
Ahmad I.
Hamid F.A.
Zaharim A.
Elgomati H.A.
Majlis B.Y.
Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET
description In this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of a device. In this paper, there are eight process parameters (control factors) were varied for 2 and 3 levels to performed 18 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, S/D implant energy was identified as one of the process parameter that has the strongest effect on the response characteristics. While the halo implant dose was identified as an adjustment factor to get the nominal values of VTH for NMOS device equal to 0.289V at tox 1.06nm. � 2011 IEEE.
author2 36239165300
author_facet 36239165300
Salehuddin F.
Ahmad I.
Hamid F.A.
Zaharim A.
Elgomati H.A.
Majlis B.Y.
format Conference Paper
author Salehuddin F.
Ahmad I.
Hamid F.A.
Zaharim A.
Elgomati H.A.
Majlis B.Y.
author_sort Salehuddin F.
title Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET
title_short Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET
title_full Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET
title_fullStr Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET
title_full_unstemmed Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET
title_sort analyze of input process parameter variation on threshold voltage in 45nm n-channel mosfet
publishDate 2023
_version_ 1806424230417399808
score 13.211869

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