Cover Image

Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device

In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters...

Full description

Saved in:
Bibliographic Details
Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
Other Authors: 36239165300
Format: Article
Published: 2023
Subjects:
45nm PMOS device
Component
HALO
S/D Implantation
Taguchi Method
Threshold Voltage
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.uniten.dspace-29589
record_format dspace
spelling my.uniten.dspace-295892023-12-28T15:05:43Z Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device Salehuddin F. Ahmad I. Hamid F.A. Zaharim A. 36239165300 12792216600 6603573875 15119466900 45nm PMOS device Component HALO S/D Implantation Taguchi Method Threshold Voltage In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters on threshold voltage was determined by using analysis of variance (ANOVA). The virtual fabrication of the PMOS device was performed by using ATHENA module. While the electrical characterization of the device was implemented by using ATLAS module. These two modules were combined with Taguchi method to aid in design and optimizer the process parameters. Besides HALO and S/D implantation, the other two process parameters which used were oxide growth temperature and silicide anneal temperature. These process parameters were varied for 3 levels to perform 9 experiments. Threshold voltage (VTH) results were used as the evaluation variables. Then, the results were subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. The predicted values of the process parameters were verified successfully with ATHENA and ATLAS's simulator. In this research, halo implantation found to be the major factor affecting the threshold voltage (70%), whereas silicide anneal temperature was the second ranking factor (17%). As conclusions, halo implantation was identified as one of the process parameters that has the strongest effect on the response characteristics. While the S/D Implantation was identified as an adjustment factor to get the threshold voltage closer to the nominal value (-0.150V). Final 2023-12-28T07:05:43Z 2023-12-28T07:05:43Z 2011 Article 2-s2.0-79751523150 https://www.scopus.com/inward/record.uri?eid=2-s2.0-79751523150&partnerID=40&md5=d278e712bba5fb356c70c6064fc84789 https://irepository.uniten.edu.my/handle/123456789/29589 5 1 55 61 Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
topic 45nm PMOS device
Component
HALO
S/D Implantation
Taguchi Method
Threshold Voltage
spellingShingle 45nm PMOS device
Component
HALO
S/D Implantation
Taguchi Method
Threshold Voltage
Salehuddin F.
Ahmad I.
Hamid F.A.
Zaharim A.
Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device
description In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters on threshold voltage was determined by using analysis of variance (ANOVA). The virtual fabrication of the PMOS device was performed by using ATHENA module. While the electrical characterization of the device was implemented by using ATLAS module. These two modules were combined with Taguchi method to aid in design and optimizer the process parameters. Besides HALO and S/D implantation, the other two process parameters which used were oxide growth temperature and silicide anneal temperature. These process parameters were varied for 3 levels to perform 9 experiments. Threshold voltage (VTH) results were used as the evaluation variables. Then, the results were subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. The predicted values of the process parameters were verified successfully with ATHENA and ATLAS's simulator. In this research, halo implantation found to be the major factor affecting the threshold voltage (70%), whereas silicide anneal temperature was the second ranking factor (17%). As conclusions, halo implantation was identified as one of the process parameters that has the strongest effect on the response characteristics. While the S/D Implantation was identified as an adjustment factor to get the threshold voltage closer to the nominal value (-0.150V).
author2 36239165300
author_facet 36239165300
Salehuddin F.
Ahmad I.
Hamid F.A.
Zaharim A.
format Article
author Salehuddin F.
Ahmad I.
Hamid F.A.
Zaharim A.
author_sort Salehuddin F.
title Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device
title_short Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device
title_full Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device
title_fullStr Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device
title_full_unstemmed Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device
title_sort influence of halo and source/drain implantation on threshold voltage in 45nm pmos device
publishDate 2023
_version_ 1806423275997233152
score 13.211869

Similar Items