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Characterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvesting

Cells; Crystal structure; Cytology; Efficiency; Gallium alloys; III-V semiconductors; Indium alloys; Indium phosphide; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconducting indium phosphide; Semiconductor alloys; Substrates; Waste heat utilization; Cell performance; Character...

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Main Authors: Gamel M.M.A., Ker P.J., Lee H.J., Hannan M.A.
Other Authors: 57215306835
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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spelling my.uniten.dspace-264062023-05-29T17:10:05Z Characterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvesting Gamel M.M.A. Ker P.J. Lee H.J. Hannan M.A. 57215306835 37461740800 57190622221 7103014445 Cells; Crystal structure; Cytology; Efficiency; Gallium alloys; III-V semiconductors; Indium alloys; Indium phosphide; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconducting indium phosphide; Semiconductor alloys; Substrates; Waste heat utilization; Cell performance; Characterization; In0.53Ga0.47As; Lattice-matched; Optimisations; Performance; Radiation temperature; TPV; Waste heat harvesting; Waste heat In0.53Ga0.47As III-V semiconductor material has attracted significant attention from thermophotovoltaic research community due to its excellent optical and electrical properties. Furthermore, a high crystal In0.53Ga0.47 As structure can be grown on a lattice-matched InP substrate, making it a suitable candidate for large-scale production. However, the predominant drawback of the cell is low conversion efficiency, and there is a lack of detailed analysis of the effect of waste heat temperatures on the cell performance. Therefore, this work aims to conduct a comprehensive analysis via optimizing the active junction and characterizing the In0.53Ga0.47 As TPV structure under different waste heat temperatures ranging from 800 to 2000 K. TCAD Silvaco software was used to simulate the output performance of the TPV cell. The simulation results were validated with the reported experimental results. Results show that the variation of base layer thicknesses significantly affect the cell performance, with a significant increase in efficiency from 6.98 to 18.2% at a radiation temperature of 1000 K, as the base thickness increased from 1 to 13 ?m. For radiation's temperatures from 800 K to 2000 K, the efficiencies of the optimized TPV cells increased by more than 10% as compared to the reference structure. The results obtained from this study contribute to the understanding of the effects of various waste heat temperatures on the performance of In0.53Ga0.47 As TPV cell, as well as to provide useful guidelines to fabricate high-performance In0.53Ga0.47As TPV cell for various waste heat temperatures. � 2021 IEEE. Final 2023-05-29T09:10:05Z 2023-05-29T09:10:05Z 2021 Conference Paper 10.1109/CENCON51869.2021.9627295 2-s2.0-85123632184 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85123632184&doi=10.1109%2fCENCON51869.2021.9627295&partnerID=40&md5=868c1f2cc8e30b4f2bc5de2404ccaf7f https://irepository.uniten.edu.my/handle/123456789/26406 108 113 Institute of Electrical and Electronics Engineers Inc. Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description Cells; Crystal structure; Cytology; Efficiency; Gallium alloys; III-V semiconductors; Indium alloys; Indium phosphide; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconducting indium phosphide; Semiconductor alloys; Substrates; Waste heat utilization; Cell performance; Characterization; In0.53Ga0.47As; Lattice-matched; Optimisations; Performance; Radiation temperature; TPV; Waste heat harvesting; Waste heat
author2 57215306835
author_facet 57215306835
Gamel M.M.A.
Ker P.J.
Lee H.J.
Hannan M.A.
format Conference Paper
author Gamel M.M.A.
Ker P.J.
Lee H.J.
Hannan M.A.
spellingShingle Gamel M.M.A.
Ker P.J.
Lee H.J.
Hannan M.A.
Characterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvesting
author_sort Gamel M.M.A.
title Characterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvesting
title_short Characterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvesting
title_full Characterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvesting
title_fullStr Characterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvesting
title_full_unstemmed Characterization and Optimization of Lattice-Matched InGaAs TPV Cell for Waste Heat Harvesting
title_sort characterization and optimization of lattice-matched ingaas tpv cell for waste heat harvesting
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2023
_version_ 1806425877994536960
score 13.222552

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