Cover Image

Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation

The repercussions of a 16 nm double-gate FinFET (DG-FinFET) design against two different optimization methods are investigated and examined. The drive current (ION) and leakage current (IOFF) ramifications towards the adjustment of six process parameter that incorporates polysilicon doping dose, pol...

Full description

Saved in:
Bibliographic Details
Main Authors: Roslan A.F., Salehuddin F., Zain A.S.M., Kaharudin K.E., Ahmad I.
Other Authors: 57203514087
Format: Article
Published: Asian Research Publishing Network 2023
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.uniten.dspace-25619
record_format dspace
spelling my.uniten.dspace-256192023-05-29T16:11:47Z Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation Roslan A.F. Salehuddin F. Zain A.S.M. Kaharudin K.E. Ahmad I. 57203514087 36239165300 55925762500 56472706900 12792216600 The repercussions of a 16 nm double-gate FinFET (DG-FinFET) design against two different optimization methods are investigated and examined. The drive current (ION) and leakage current (IOFF) ramifications towards the adjustment of six process parameter that incorporates polysilicon doping dose, polysilicon doping tilt, Source/Drain doping dose, Source/Drain doping tilt, VTH doping dose and VTH doping tilt for both L25 Orthogonal Array (OA) Grey Relational Analysis (GRA) as well as an L25 OA of Taguchi Statistical Method (TSM). However, with TSM, a consideration of noise factor in gate oxidation temperature and polysilicon oxidation temperature is included. The utilization of ATLAS and ATHENA modules enables respective design simulation as well as characterizations of device's electrical attributes to be performed. Subsequent to the initial responses from the design simulation, implementation of both TSM and GRA have been implemented separately to assist in process parameter optimization in view to optimize the output responses. The factor percentage of Signal-to-noise ratio determined the process parameter's effectivity. The most prominent factor is similar for both TSM and TSM-based GRA for which is the polysilicon doping tilt, whereby for L25 OA TSM, the ION and IOFF obtained after the optimization are 1559.97 ?A/?m and 33.03 pA/?m that brings the ION/IOFF ratio to 47.23 � 106 as opposed to more insignificant 32.49 � 106 on pre-optimized simulation. Meanwhile small increment of ratio at 48.01 x 106 from respective values of 1656.27 ?A/?m and 34.49 pA/?m for the TSM-based GRA proves that both optimization techniques have met the predictions of International Technology Roadmap for Semiconductors (ITRS) 2013. � 2006-2020 Asian Research Publishing Network (ARPN). Final 2023-05-29T08:11:46Z 2023-05-29T08:11:46Z 2020 Article 2-s2.0-85106821610 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85106821610&partnerID=40&md5=d1008e155b5a677df14bc19916076eff https://irepository.uniten.edu.my/handle/123456789/25619 15 2 233 241 Asian Research Publishing Network Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description The repercussions of a 16 nm double-gate FinFET (DG-FinFET) design against two different optimization methods are investigated and examined. The drive current (ION) and leakage current (IOFF) ramifications towards the adjustment of six process parameter that incorporates polysilicon doping dose, polysilicon doping tilt, Source/Drain doping dose, Source/Drain doping tilt, VTH doping dose and VTH doping tilt for both L25 Orthogonal Array (OA) Grey Relational Analysis (GRA) as well as an L25 OA of Taguchi Statistical Method (TSM). However, with TSM, a consideration of noise factor in gate oxidation temperature and polysilicon oxidation temperature is included. The utilization of ATLAS and ATHENA modules enables respective design simulation as well as characterizations of device's electrical attributes to be performed. Subsequent to the initial responses from the design simulation, implementation of both TSM and GRA have been implemented separately to assist in process parameter optimization in view to optimize the output responses. The factor percentage of Signal-to-noise ratio determined the process parameter's effectivity. The most prominent factor is similar for both TSM and TSM-based GRA for which is the polysilicon doping tilt, whereby for L25 OA TSM, the ION and IOFF obtained after the optimization are 1559.97 ?A/?m and 33.03 pA/?m that brings the ION/IOFF ratio to 47.23 � 106 as opposed to more insignificant 32.49 � 106 on pre-optimized simulation. Meanwhile small increment of ratio at 48.01 x 106 from respective values of 1656.27 ?A/?m and 34.49 pA/?m for the TSM-based GRA proves that both optimization techniques have met the predictions of International Technology Roadmap for Semiconductors (ITRS) 2013. � 2006-2020 Asian Research Publishing Network (ARPN).
author2 57203514087
author_facet 57203514087
Roslan A.F.
Salehuddin F.
Zain A.S.M.
Kaharudin K.E.
Ahmad I.
format Article
author Roslan A.F.
Salehuddin F.
Zain A.S.M.
Kaharudin K.E.
Ahmad I.
spellingShingle Roslan A.F.
Salehuddin F.
Zain A.S.M.
Kaharudin K.E.
Ahmad I.
Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation
author_sort Roslan A.F.
title Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation
title_short Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation
title_full Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation
title_fullStr Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation
title_full_unstemmed Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation
title_sort comparison of l25 gra and l25 taguchi statistical method for optimizing 16 nm dg-finfet on output variation
publisher Asian Research Publishing Network
publishDate 2023
_version_ 1806424719491072000
score 13.222552

Similar Items