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Influence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application

Cadmium Telluride (CdTe) thin films were grown on borosilicate glass substrates by close-spaced sublimation (CSS) at a pressure of 1.5�2 Torr in Ar ambient. CdTe thin films were sublimed at a source temperature of 625 �C and substrate temperature of 595 �C. In this study, the impact of various depos...

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Main Authors: Rahman K.S., Harif M.N., Rosly H.N., Kamaruzzaman M.I.B., Akhtaruzzaman M., Alghoul M., Misran H., Amin N.
Other Authors: 56348138800
Format: Article
Published: Elsevier B.V. 2023
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spelling my.uniten.dspace-244882023-05-29T15:23:57Z Influence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application Rahman K.S. Harif M.N. Rosly H.N. Kamaruzzaman M.I.B. Akhtaruzzaman M. Alghoul M. Misran H. Amin N. 56348138800 22634024000 36873451800 56674575700 57195441001 8626748100 6506899840 7102424614 Cadmium Telluride (CdTe) thin films were grown on borosilicate glass substrates by close-spaced sublimation (CSS) at a pressure of 1.5�2 Torr in Ar ambient. CdTe thin films were sublimed at a source temperature of 625 �C and substrate temperature of 595 �C. In this study, the impact of various deposition times on the structural, morphological, topographical, electrical and optical properties of CdTe thin films has been explored to achieve high quality thin film absorber layer for solar cells applications. The crystalline structure, surface morphology, surface topology, electrical and optical properties of the films were examined by using X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Atomic Force Microscopy (AFM), Hall Effect measurement and UV�Vis spectrophotometry, respectively. XRD investigation demonstrated that CdTe film shows polycrystalline nature pronounced with cubic zinc blende structure with a strong preferential (1 1 1) orientation. The FESEM images illustrated that the surface morphology and the average grain size of the films were dependent on the deposition times of CdTe thin films. AFM analysis revealed noteworthy changes in the film's surface roughness values for different deposition times. Carrier concentration was found in the order of 1013 cm?3. Band gap of CdTe thin film was found in the range 1.45�1.48 eV, which is suitable to be used in CdTe thin film solar cells. � 2019 The Authors Final 2023-05-29T07:23:57Z 2023-05-29T07:23:57Z 2019 Article 10.1016/j.rinp.2019.102371 2-s2.0-85066410435 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85066410435&doi=10.1016%2fj.rinp.2019.102371&partnerID=40&md5=7917159f97a15ab1aa2765e4cb7d983a https://irepository.uniten.edu.my/handle/123456789/24488 14 102371 All Open Access, Gold Elsevier B.V. Scopus
institution Universiti Tenaga Nasional
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description Cadmium Telluride (CdTe) thin films were grown on borosilicate glass substrates by close-spaced sublimation (CSS) at a pressure of 1.5�2 Torr in Ar ambient. CdTe thin films were sublimed at a source temperature of 625 �C and substrate temperature of 595 �C. In this study, the impact of various deposition times on the structural, morphological, topographical, electrical and optical properties of CdTe thin films has been explored to achieve high quality thin film absorber layer for solar cells applications. The crystalline structure, surface morphology, surface topology, electrical and optical properties of the films were examined by using X-ray diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM), Atomic Force Microscopy (AFM), Hall Effect measurement and UV�Vis spectrophotometry, respectively. XRD investigation demonstrated that CdTe film shows polycrystalline nature pronounced with cubic zinc blende structure with a strong preferential (1 1 1) orientation. The FESEM images illustrated that the surface morphology and the average grain size of the films were dependent on the deposition times of CdTe thin films. AFM analysis revealed noteworthy changes in the film's surface roughness values for different deposition times. Carrier concentration was found in the order of 1013 cm?3. Band gap of CdTe thin film was found in the range 1.45�1.48 eV, which is suitable to be used in CdTe thin film solar cells. � 2019 The Authors
author2 56348138800
author_facet 56348138800
Rahman K.S.
Harif M.N.
Rosly H.N.
Kamaruzzaman M.I.B.
Akhtaruzzaman M.
Alghoul M.
Misran H.
Amin N.
format Article
author Rahman K.S.
Harif M.N.
Rosly H.N.
Kamaruzzaman M.I.B.
Akhtaruzzaman M.
Alghoul M.
Misran H.
Amin N.
spellingShingle Rahman K.S.
Harif M.N.
Rosly H.N.
Kamaruzzaman M.I.B.
Akhtaruzzaman M.
Alghoul M.
Misran H.
Amin N.
Influence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application
author_sort Rahman K.S.
title Influence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application
title_short Influence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application
title_full Influence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application
title_fullStr Influence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application
title_full_unstemmed Influence of deposition time in CdTe thin film properties grown by Close-Spaced Sublimation (CSS) for photovoltaic application
title_sort influence of deposition time in cdte thin film properties grown by close-spaced sublimation (css) for photovoltaic application
publisher Elsevier B.V.
publishDate 2023
_version_ 1806427508082475008
score 13.211869

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