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Effect of multiplication and absorption layers width on avalanche multiplication gain in InGaAs/InP avalanche photodiode

The separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP avalanche photodiodes (ADPs) are widely used in long distance, high bit rate optical communication system due to their high performance and response to optical fiber wavelength spectrum. In this work, the effect of multi...

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Main Authors: Khamis M.A., Rashid W.E., Ker P.J., Lau K.Y.
Other Authors: 57204588662
Format: Article
Published: Science Publishing Corporation Inc 2023
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spelling my.uniten.dspace-240682023-05-29T14:55:01Z Effect of multiplication and absorption layers width on avalanche multiplication gain in InGaAs/InP avalanche photodiode Khamis M.A. Rashid W.E. Ker P.J. Lau K.Y. 57204588662 57204586520 37461740800 57214454981 The separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP avalanche photodiodes (ADPs) are widely used in long distance, high bit rate optical communication system due to their high performance and response to optical fiber wavelength spectrum. In this work, the effect of multiplication layer width (MLW) and absorption layer width (ALW) on APD performance is studied and investigated. Silvaco TCAD software is used as simulation tools to simulate a precise model of InGaAs/InP APD and analyze its, performance under an illuminated condition. As such, three different ALW with various MLW has been simulated while the structure values and material parameters are kept constant. It was found that in the APD with smaller MLW, the distance between the punch-through voltage and the breakdown voltage can be maximized. Therefore, the operation region of APD will be extended. In addition, the multiplication gain is obtained from the photocurrent and primary current by taking the APD collection efficiency effect under the consideration. � 2018 Authors. Final 2023-05-29T06:55:01Z 2023-05-29T06:55:01Z 2018 Article 10.14419/ijet.v7i4.35.22909 2-s2.0-85059231970 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85059231970&doi=10.14419%2fijet.v7i4.35.22909&partnerID=40&md5=39c57ff91871b205f469719d9fe5a309 https://irepository.uniten.edu.my/handle/123456789/24068 7 4 559 563 All Open Access, Bronze, Green Science Publishing Corporation Inc Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description The separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP avalanche photodiodes (ADPs) are widely used in long distance, high bit rate optical communication system due to their high performance and response to optical fiber wavelength spectrum. In this work, the effect of multiplication layer width (MLW) and absorption layer width (ALW) on APD performance is studied and investigated. Silvaco TCAD software is used as simulation tools to simulate a precise model of InGaAs/InP APD and analyze its, performance under an illuminated condition. As such, three different ALW with various MLW has been simulated while the structure values and material parameters are kept constant. It was found that in the APD with smaller MLW, the distance between the punch-through voltage and the breakdown voltage can be maximized. Therefore, the operation region of APD will be extended. In addition, the multiplication gain is obtained from the photocurrent and primary current by taking the APD collection efficiency effect under the consideration. � 2018 Authors.
author2 57204588662
author_facet 57204588662
Khamis M.A.
Rashid W.E.
Ker P.J.
Lau K.Y.
format Article
author Khamis M.A.
Rashid W.E.
Ker P.J.
Lau K.Y.
spellingShingle Khamis M.A.
Rashid W.E.
Ker P.J.
Lau K.Y.
Effect of multiplication and absorption layers width on avalanche multiplication gain in InGaAs/InP avalanche photodiode
author_sort Khamis M.A.
title Effect of multiplication and absorption layers width on avalanche multiplication gain in InGaAs/InP avalanche photodiode
title_short Effect of multiplication and absorption layers width on avalanche multiplication gain in InGaAs/InP avalanche photodiode
title_full Effect of multiplication and absorption layers width on avalanche multiplication gain in InGaAs/InP avalanche photodiode
title_fullStr Effect of multiplication and absorption layers width on avalanche multiplication gain in InGaAs/InP avalanche photodiode
title_full_unstemmed Effect of multiplication and absorption layers width on avalanche multiplication gain in InGaAs/InP avalanche photodiode
title_sort effect of multiplication and absorption layers width on avalanche multiplication gain in ingaas/inp avalanche photodiode
publisher Science Publishing Corporation Inc
publishDate 2023
_version_ 1806428361431449600
score 13.222552

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