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Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer

Ablation; CMOS integrated circuits; Composite micromechanics; Copper; Design of experiments; Laser ablation; Laser pulses; Micromachining; Pulse repetition rate; Semiconductor diodes; Semiconductor lasers; Silicon wafers; Solid state lasers; Advanced dicing tehcnology; Laser dicing; Laser grooving;...

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Main Authors: Shi K.W., Kar Y.B., Talik N.A., Yew L.W.
Other Authors: 35796107300
Format: Conference Paper
Published: Elsevier Ltd 2023
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spelling my.uniten.dspace-234452023-05-29T14:40:33Z Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer Shi K.W. Kar Y.B. Talik N.A. Yew L.W. 35796107300 26649255900 55576358000 56104265900 Ablation; CMOS integrated circuits; Composite micromechanics; Copper; Design of experiments; Laser ablation; Laser pulses; Micromachining; Pulse repetition rate; Semiconductor diodes; Semiconductor lasers; Silicon wafers; Solid state lasers; Advanced dicing tehcnology; Laser dicing; Laser grooving; Laser micro-machining; Laser scribing; semicoonductor wafer; Ultra low-k; Ultraviolet lasers This paper presents the optimization work of 355 nm ultraviolet (UV) laser diode ablation process for CMOS 45 nm Copper (Cu) low-k semiconductor wafer. The micromachining parameters included laser power, laser frequency, feed speed, and defocus amount were optimized via design of experiment (DOE). Package reliability stressing tests were carried out as part of the efforts to validate the robustness. The results show that high repetition rate, low laser pulse energy and a high pulse overlap produced zero dicing defects. The laser groove depth increased as the laser pulse energy increased. It is shown that, laser grooving is one of the best solutions to choose for dicing quality, throughput and yield improvements for CMOS 45 nm Cu low-k wafer dicing. � 2017 The Authors. Published by Elsevier Ltd. Final 2023-05-29T06:40:33Z 2023-05-29T06:40:33Z 2017 Conference Paper 10.1016/j.proeng.2017.04.106 2-s2.0-85019716403 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85019716403&doi=10.1016%2fj.proeng.2017.04.106&partnerID=40&md5=be4cf7e4b766be6d405f9d7e36c10d31 https://irepository.uniten.edu.my/handle/123456789/23445 184 360 369 All Open Access, Gold Elsevier Ltd Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description Ablation; CMOS integrated circuits; Composite micromechanics; Copper; Design of experiments; Laser ablation; Laser pulses; Micromachining; Pulse repetition rate; Semiconductor diodes; Semiconductor lasers; Silicon wafers; Solid state lasers; Advanced dicing tehcnology; Laser dicing; Laser grooving; Laser micro-machining; Laser scribing; semicoonductor wafer; Ultra low-k; Ultraviolet lasers
author2 35796107300
author_facet 35796107300
Shi K.W.
Kar Y.B.
Talik N.A.
Yew L.W.
format Conference Paper
author Shi K.W.
Kar Y.B.
Talik N.A.
Yew L.W.
spellingShingle Shi K.W.
Kar Y.B.
Talik N.A.
Yew L.W.
Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer
author_sort Shi K.W.
title Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer
title_short Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer
title_full Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer
title_fullStr Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer
title_full_unstemmed Ultraviolet Laser Diode Ablation Process for CMOS 45 nm Copper Low-K Semiconductor Wafer
title_sort ultraviolet laser diode ablation process for cmos 45 nm copper low-k semiconductor wafer
publisher Elsevier Ltd
publishDate 2023
_version_ 1806426137196232704
score 13.223943

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