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Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics

Dark currents; Electric fields; Electron tunneling; Epitaxial growth; Imaging techniques; Infrared radiation; Metallorganic vapor phase epitaxy; Molecular beam epitaxy; Organometallics; Photodiodes; Electric field profiles; Electrical characteristic; Generation recombination; High electric fields; I...

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Main Authors: Roslan P.S.A., Ker P.J., Ahmad I., Pasupuleti J., Fam P.Z.
Other Authors: 57188858559
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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spelling my.uniten.dspace-226582023-05-29T14:11:30Z Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics Roslan P.S.A. Ker P.J. Ahmad I. Pasupuleti J. Fam P.Z. 57188858559 37461740800 12792216600 11340187300 57191487019 Dark currents; Electric fields; Electron tunneling; Epitaxial growth; Imaging techniques; Infrared radiation; Metallorganic vapor phase epitaxy; Molecular beam epitaxy; Organometallics; Photodiodes; Electric field profiles; Electrical characteristic; Generation recombination; High electric fields; III-IV semiconductors; InAs; Metal-organic vapor phase epitaxy; Trap assisted tunneling; Narrow band gap semiconductors This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100?m � 1?m cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum material physical parameters based on the parameters reported in other literatures. Dark current mechanisms, which include drift-diffusion current, generation-recombination current, trap-assisted tunneling current and band-to-band tunneling current, were incorporated into the ATLAS electrical characteristics model. Simulated dark current results were compared with the experimental results that were obtained from InAs photodiodes fabricated from molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) grown InAs wafers. Good agreement is found between the simulation and experimental results. � 2016 IEEE. Final 2023-05-29T06:11:30Z 2023-05-29T06:11:30Z 2016 Conference Paper 10.1109/SMELEC.2016.7573623 2-s2.0-84990891489 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84990891489&doi=10.1109%2fSMELEC.2016.7573623&partnerID=40&md5=cd14d5e6a4c8f48577ac0b42d23cadf0 https://irepository.uniten.edu.my/handle/123456789/22658 2016-September 7573623 188 191 Institute of Electrical and Electronics Engineers Inc. Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description Dark currents; Electric fields; Electron tunneling; Epitaxial growth; Imaging techniques; Infrared radiation; Metallorganic vapor phase epitaxy; Molecular beam epitaxy; Organometallics; Photodiodes; Electric field profiles; Electrical characteristic; Generation recombination; High electric fields; III-IV semiconductors; InAs; Metal-organic vapor phase epitaxy; Trap assisted tunneling; Narrow band gap semiconductors
author2 57188858559
author_facet 57188858559
Roslan P.S.A.
Ker P.J.
Ahmad I.
Pasupuleti J.
Fam P.Z.
format Conference Paper
author Roslan P.S.A.
Ker P.J.
Ahmad I.
Pasupuleti J.
Fam P.Z.
spellingShingle Roslan P.S.A.
Ker P.J.
Ahmad I.
Pasupuleti J.
Fam P.Z.
Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics
author_sort Roslan P.S.A.
title Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics
title_short Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics
title_full Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics
title_fullStr Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics
title_full_unstemmed Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics
title_sort modeling and simulation of inas photodiode on electric field profile and dark current characteristics
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2023
_version_ 1806423457384103936
score 13.222552

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