Staff View: Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))

Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))

The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanatio...

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Main Authors:	Siti Kudnie, Sahari, Nik Amni Fathi, Nik Zaini Fathi, Azrul Azlan, Hamzah, Norsuzailina, Mohamed Sutan, Zaidi, Embong, Suhana, Muhamed Sultan, Muhammad, Kashif, Marini, Sawawi, Lilik, Hasanah, Rohana, Sapawi, Kuryati, Kipli, Abdul Rahman, Kram, Nazreen, Junaidi
Format:	Article
Language:	English
Published:	Penerbit UKM 2019
Subjects:	TP Chemical technology
Online Access:	http://ir.unimas.my/id/eprint/26219/1/SITI%20KUDNIE.pdf http://ir.unimas.my/id/eprint/26219/ http://www.ukm.my/jsm/
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spelling	my.unimas.ir.262192023-03-29T01:55:39Z http://ir.unimas.my/id/eprint/26219/ Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 )) Siti Kudnie, Sahari Nik Amni Fathi, Nik Zaini Fathi Azrul Azlan, Hamzah Norsuzailina, Mohamed Sutan Zaidi, Embong Suhana, Muhamed Sultan Muhammad, Kashif Marini, Sawawi Lilik, Hasanah Rohana, Sapawi Kuryati, Kipli Abdul Rahman, Kram Nazreen, Junaidi TP Chemical technology The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2 O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2 O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2 O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2 O3 interface at higher temperature of 600°C. Penerbit UKM 2019 Article PeerReviewed text en http://ir.unimas.my/id/eprint/26219/1/SITI%20KUDNIE.pdf Siti Kudnie, Sahari and Nik Amni Fathi, Nik Zaini Fathi and Azrul Azlan, Hamzah and Norsuzailina, Mohamed Sutan and Zaidi, Embong and Suhana, Muhamed Sultan and Muhammad, Kashif and Marini, Sawawi and Lilik, Hasanah and Rohana, Sapawi and Kuryati, Kipli and Abdul Rahman, Kram and Nazreen, Junaidi (2019) Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 )). Sains Malaysiana, 48 (6). pp. 1195-1199. ISSN 0126-6039 http://www.ukm.my/jsm/ DOI: 10.17576/jsm-2019-4806-06
institution	Universiti Malaysia Sarawak
building	Centre for Academic Information Services (CAIS)
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaysia Sarawak
content_source	UNIMAS Institutional Repository
url_provider	http://ir.unimas.my/
language	English
topic	TP Chemical technology
spellingShingle	TP Chemical technology Siti Kudnie, Sahari Nik Amni Fathi, Nik Zaini Fathi Azrul Azlan, Hamzah Norsuzailina, Mohamed Sutan Zaidi, Embong Suhana, Muhamed Sultan Muhammad, Kashif Marini, Sawawi Lilik, Hasanah Rohana, Sapawi Kuryati, Kipli Abdul Rahman, Kram Nazreen, Junaidi Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))
description	The understanding of chemical bonding structure of high k dielectrics/Germanium (Ge) interface is upmost importance in order to form a good quality dielectric/Ge interface in fabricating Ge metal oxide semiconductor field effect transistor (MOSFETs). In addition, there is still no detail explanation on the interfacial growth of dielectrics/Ge under the influenced of different temperature of post deposition anneal. In current work, the effects of post deposition anneal (PDA) temperature between 400°C and 600°C on the chemical composition of interfacial layer between Ge and Al2 O3 were examined by X-ray photoelectron spectroscopy (XPS). Investigation on thermal stability and structural characteristics for gate structure of Al2 O3 dielectric grown on Ge by RF sputtering was done by analyzing X-ray photoelectron spectroscopy (XPS) spectra. It is observed that the oxygen deficient region in interfacial layer (IL) is enhanced rather than fully oxidized Al2 O3 with increased PDA temperatures. These undesired phenomena caused shrinkage of IL at Ge/Al2 O3 interface at higher temperature of 600°C.
format	Article
author	Siti Kudnie, Sahari Nik Amni Fathi, Nik Zaini Fathi Azrul Azlan, Hamzah Norsuzailina, Mohamed Sutan Zaidi, Embong Suhana, Muhamed Sultan Muhammad, Kashif Marini, Sawawi Lilik, Hasanah Rohana, Sapawi Kuryati, Kipli Abdul Rahman, Kram Nazreen, Junaidi
author_facet	Siti Kudnie, Sahari Nik Amni Fathi, Nik Zaini Fathi Azrul Azlan, Hamzah Norsuzailina, Mohamed Sutan Zaidi, Embong Suhana, Muhamed Sultan Muhammad, Kashif Marini, Sawawi Lilik, Hasanah Rohana, Sapawi Kuryati, Kipli Abdul Rahman, Kram Nazreen, Junaidi
author_sort	Siti Kudnie, Sahari
title	Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))
title_short	Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))
title_full	Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))
title_fullStr	Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))
title_full_unstemmed	Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))
title_sort	effects of post-deposition annealing temperatures on the composition of interfacial layer at germanium (ge) /aluminium oxide (al2 o3 ) (kesan suhu penyepuhlindapan pasca pemendapan ke atas komposisi antara muka lapisan oksida germanium (ge)/aluminium (al2 o3 ))
publisher	Penerbit UKM
publishDate	2019
url	http://ir.unimas.my/id/eprint/26219/1/SITI%20KUDNIE.pdf http://ir.unimas.my/id/eprint/26219/ http://www.ukm.my/jsm/
_version_	1761675230148820992
score	13.211869

Effects of Post-Deposition Annealing Temperatures on the Composition of Interfacial Layer at Germanium (Ge) /Aluminium Oxide (Al2 O3 ) (Kesan Suhu Penyepuhlindapan Pasca Pemendapan ke atas Komposisi Antara Muka Lapisan Oksida Germanium (Ge)/Aluminium (Al2 O3 ))

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