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Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study

Master of Science (Microelectronic Engineering)

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Bibliographic Details
Main Author:	Mohd Faiz Aizad, Abdul Fatah
Other Authors:	Uda Hashim, Assoc. Prof. Dr.
Format:	Thesis
Language:	English
Published:	Universiti Malaysia Perlis (UniMAP) 2019
Subjects:	Silicon nitride Electric insulators and insulation > Thin films Thin films Sub nano devices Ultra thin silicon dioxide
Online Access:	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63455
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spelling	my.unimap-634552019-11-29T07:12:27Z Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study Mohd Faiz Aizad, Abdul Fatah Uda Hashim, Assoc. Prof. Dr. Silicon nitride Electric insulators and insulation -- Thin films Thin films Sub nano devices Ultra thin silicon dioxide Master of Science (Microelectronic Engineering) The aim of this research is to fabricate and characterize (optical and electrical) an ultra thin silicon dioxide for sub nano devices. In this research, dry oxidation method using high temperature furnace is chosen to fabricate a thin layer of oxide below 30Angstroms. There are three level of temperature used. that is 7S0, 800 and 8S(/C. The wqfers were grown in 0.333 litre/min. 0,667 liter/min and 1.00 literlmin oxygen flow rate with variation in growth time 1, 2 and 3 minutes. Thicknesses were obtained using ellipsometer and the surface topography and were achieved using atomic force microscope (UM). Parameters and data has been interpreted using Taguchi's method. This is to analyze the most affecting factors in producing an ultra thin silicon dioxide. Taguchi's method were able to predict the thicknesses for each combination of parameters. Results show that the temperature is the most effecting factor that effects the growth of oxide. Results also show that oxygen flow rates do have an influence to the thicknesses and surface properties. A higher amount of flow rate (illmin) will increase the oxide thickness and also will create a smooth oxide surface. There are also results of a high frequency CV and IV techniques were employed as for the devices electrical characterizations. The CV results shows that there is a shift in VFB for all the wafers and IV shows that breakdown occurs at 1 MV/cm. 2019-11-29T07:12:27Z 2019-11-29T07:12:27Z 2007 Thesis http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63455 en Universiti Malaysia Perlis (UniMAP) School of Microelectronic Engineering
institution	Universiti Malaysia Perlis
building	UniMAP Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaysia Perlis
content_source	UniMAP Library Digital Repository
url_provider	http://dspace.unimap.edu.my/
language	English
topic	Silicon nitride Electric insulators and insulation -- Thin films Thin films Sub nano devices Ultra thin silicon dioxide
spellingShingle	Silicon nitride Electric insulators and insulation -- Thin films Thin films Sub nano devices Ultra thin silicon dioxide Mohd Faiz Aizad, Abdul Fatah Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
description	Master of Science (Microelectronic Engineering)
author2	Uda Hashim, Assoc. Prof. Dr.
author_facet	Uda Hashim, Assoc. Prof. Dr. Mohd Faiz Aizad, Abdul Fatah
format	Thesis
author	Mohd Faiz Aizad, Abdul Fatah
author_sort	Mohd Faiz Aizad, Abdul Fatah
title	Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
title_short	Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
title_full	Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
title_fullStr	Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
title_full_unstemmed	Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study
title_sort	fabrication and characterization of ultra thin si0₂ for nano devices: surface morphology and electrical study
publisher	Universiti Malaysia Perlis (UniMAP)
publishDate	2019
url	http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63455
_version_	1651868841892904960
score	13.211869

Fabrication and characterization of ultra thin Si0₂ for nano devices: surface morphology and electrical study

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