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Fabrication and characterization of silicon-based Ba0.7Sr 0.3TiO3 thin films for FeFET applications

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Main Authors: Saif, Ala'eddin A., Poopalan, Prabakaran, Dr.
Other Authors: alasaif82@hotmail.com
Format: Working Paper
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2014
Subjects:
BST thin film
Ferroelectric hysteresis
Grain size
Memory windows
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/32140
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spelling my.unimap-321402014-02-24T14:39:31Z Fabrication and characterization of silicon-based Ba0.7Sr 0.3TiO3 thin films for FeFET applications Saif, Ala'eddin A. Poopalan, Prabakaran, Dr. alasaif82@hotmail.com prabakaran@unimap.edu.my BST thin film Ferroelectric hysteresis Grain size Memory windows Link to publisher's homepage at http://ieeexplore.ieee.org Ferroelectric Ba0.7Sr0.3TiO3 thin films have been fabricated as MFIS and MFM configurations using sol-gel technique to study the possibility of using these films in FeFET applications. To ensure the quality of the films, the dielectric properties of the material within MFM structure have been investigated using an impedance analyzer which shows good quality for the films. The ferroelectric properties of the MFM type films were studied using Sawyer-Tower circuit. The films show hysteresis loop, its strength increases with the film thickness which is attributed the grain size effect. Whereas the ferroelectric properties of the MFIS type films were studied using capacitance-voltage (C-V) characteristics. The films show memory window its width increases with the film thickness which is also attributed the grain size effect. 2014-02-24T14:39:31Z 2014-02-24T14:39:31Z 2012-07-10 Working Paper p. 182-186 978-146732688-9 http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6320498 http://dspace.unimap.edu.my:80/dspace/handle/123456789/32140 en Proceedings of the 4th Asia Symposium on Quality Electronic Design (ASQED 2012); Institute of Electrical and Electronics Engineers (IEEE)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic BST thin film
Ferroelectric hysteresis
Grain size
Memory windows
spellingShingle BST thin film
Ferroelectric hysteresis
Grain size
Memory windows
Saif, Ala'eddin A.
Poopalan, Prabakaran, Dr.
Fabrication and characterization of silicon-based Ba0.7Sr 0.3TiO3 thin films for FeFET applications
description Link to publisher's homepage at http://ieeexplore.ieee.org
author2 alasaif82@hotmail.com
author_facet alasaif82@hotmail.com
Saif, Ala'eddin A.
Poopalan, Prabakaran, Dr.
format Working Paper
author Saif, Ala'eddin A.
Poopalan, Prabakaran, Dr.
author_sort Saif, Ala'eddin A.
title Fabrication and characterization of silicon-based Ba0.7Sr 0.3TiO3 thin films for FeFET applications
title_short Fabrication and characterization of silicon-based Ba0.7Sr 0.3TiO3 thin films for FeFET applications
title_full Fabrication and characterization of silicon-based Ba0.7Sr 0.3TiO3 thin films for FeFET applications
title_fullStr Fabrication and characterization of silicon-based Ba0.7Sr 0.3TiO3 thin films for FeFET applications
title_full_unstemmed Fabrication and characterization of silicon-based Ba0.7Sr 0.3TiO3 thin films for FeFET applications
title_sort fabrication and characterization of silicon-based ba0.7sr 0.3tio3 thin films for fefet applications
publisher Institute of Electrical and Electronics Engineers (IEEE)
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/32140
_version_ 1643796798555291648
score 13.211869

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