Sol-gel BST thin films for FeFET applications : fabrication and characterization
The effect of the chemical composition and film thickness of the ferroelectric barium strontium titanate (BST) at the memory window behavior of Al/BST/SiO2/Si-Gatefield effect transistor structure has been investigated. BaxSr1-xTiO3 thin films with different x values and film thickness have been f...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
Universiti Malaysia Perlis (UniMAP)
2014
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| Subjects: | |
| Online Access: | http://dspace.unimap.edu.my:80/dspace/handle/123456789/31170 |
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