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Effect of different dielectric materials for Ultrathin Oxide

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Bibliographic Details
Main Author:	Zarimawaty Zailan
Other Authors:	Mohd Hafiz Ismail (Advisor)
Format:	Learning Object
Language:	English
Published:	Universiti Malaysia Perlis 2008
Subjects:	Dielectrics Silicon oxide films Semiconductors Ultrathin oxide Lower leakage current High-k materials Integrated circuits Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
Online Access:	http://dspace.unimap.edu.my/xmlui/handle/123456789/2007
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id	my.unimap-2007
record_format	dspace
spelling	my.unimap-20072008-09-15T09:07:12Z Effect of different dielectric materials for Ultrathin Oxide Zarimawaty Zailan Mohd Hafiz Ismail (Advisor) Dielectrics Silicon oxide films Semiconductors Ultrathin oxide Lower leakage current High-k materials Integrated circuits Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Access is limited to UniMAP community. This paper I want to describe the reliability study of the effect of different dielectric materials for ultrathin oxide. The alternative high–k gate dielectrics are to provide a substantially thicker (physical thickness) for an improved performance according to increase permittivity, physical thickness characteristic and reduced leakage current. Design considerations for ultrathin gate oxide MOSFET devices are presented. Based on simulation and theory background it is shown that the most important parameters are the type of dielectrics materials and deposit thickness of dielectric materials. Experimental evidence for ultrathin gate oxide has been presented. 2008-09-09T05:29:21Z 2008-09-09T05:29:21Z 2008-04 Learning Object http://hdl.handle.net/123456789/2007 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution	Universiti Malaysia Perlis
building	UniMAP Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaysia Perlis
content_source	UniMAP Library Digital Repository
url_provider	http://dspace.unimap.edu.my/
language	English
topic	Dielectrics Silicon oxide films Semiconductors Ultrathin oxide Lower leakage current High-k materials Integrated circuits Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
spellingShingle	Dielectrics Silicon oxide films Semiconductors Ultrathin oxide Lower leakage current High-k materials Integrated circuits Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Zarimawaty Zailan Effect of different dielectric materials for Ultrathin Oxide
description	Access is limited to UniMAP community.
author2	Mohd Hafiz Ismail (Advisor)
author_facet	Mohd Hafiz Ismail (Advisor) Zarimawaty Zailan
format	Learning Object
author	Zarimawaty Zailan
author_sort	Zarimawaty Zailan
title	Effect of different dielectric materials for Ultrathin Oxide
title_short	Effect of different dielectric materials for Ultrathin Oxide
title_full	Effect of different dielectric materials for Ultrathin Oxide
title_fullStr	Effect of different dielectric materials for Ultrathin Oxide
title_full_unstemmed	Effect of different dielectric materials for Ultrathin Oxide
title_sort	effect of different dielectric materials for ultrathin oxide
publisher	Universiti Malaysia Perlis
publishDate	2008
url	http://dspace.unimap.edu.my/xmlui/handle/123456789/2007
_version_	1643787529611116544
score	13.222552

Effect of different dielectric materials for Ultrathin Oxide

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