Design and simulation of Gallium Arsenide based Schottky diodes for RF applications
Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic switching speeds. Gallium Arsenide (GaAs) based Schottky Diodes have superior...
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| Format: | Learning Object |
| Language: | English |
| Published: |
Universiti Malaysia Perlis
2008
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| Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/1966 |
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