Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic structure. The diffusion process is a method to control the thermal budget to expand performance device by combination of temperatur...
保存先:
第一著者: | |
---|---|
その他の著者: | |
フォーマット: | Learning Object |
言語: | English |
出版事項: |
Universiti Malaysia Perlis
2008
|
主題: | |
オンライン・アクセス: | http://dspace.unimap.edu.my/xmlui/handle/123456789/1964 |
タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|