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Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique

Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic structure. The diffusion process is a method to control the thermal budget to expand performance device by combination of temperatur...

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Bibliographic Details
Main Author: Mohd Rosydi Zakaria
Other Authors: Mohd Khairuddin Md Arshad (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Silicon
Semiconductors
Gallium
Spin On Dopant (SOD)
Integrated circuits
MOS transistor
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1964
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spelling my.unimap-19642008-09-15T09:12:47Z Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique Mohd Rosydi Zakaria Mohd Khairuddin Md Arshad (Advisor) Silicon Semiconductors Gallium Spin On Dopant (SOD) Integrated circuits MOS transistor Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic structure. The diffusion process is a method to control the thermal budget to expand performance device by combination of temperature and time. In this project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity. The process starts with pre-deposition and drive-in at various temperature and time. The affect of the parameters are then characterized using MiniSims and Four Point Probes to determine the junction depth, depth profiling and resistivity. The Spreading resistance profile (SRP) is then used to characterize the junction depth and concentration as comparison to the result obtained from MiniSim. The result shows that the junction depth and resistivity increased with the increase of temperature and longer exposure times in furnace. From the depth profiling results, it shows the existence of gallium mass in the silicon substrate with some contaminants. The results from experimental are found comparable with theoretical and simulation. 2008-09-05T07:52:01Z 2008-09-05T07:52:01Z 2008-03 Learning Object http://hdl.handle.net/123456789/1964 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Silicon
Semiconductors
Gallium
Spin On Dopant (SOD)
Integrated circuits
MOS transistor
spellingShingle Silicon
Semiconductors
Gallium
Spin On Dopant (SOD)
Integrated circuits
MOS transistor
Mohd Rosydi Zakaria
Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
description Diffusion and ion implantation are two major processes by which chemical species or dopant are introduced into a semiconductor such as silicon to form the electronic structure. The diffusion process is a method to control the thermal budget to expand performance device by combination of temperature and time. In this project the diffusivity of gallium using spin on dopant technique is studied. The study includes mathematical calculation, computer simulation, fabrication and characterization of the diffusivity criteria such as surface concentration, dopant profiling and resistivity. The process starts with pre-deposition and drive-in at various temperature and time. The affect of the parameters are then characterized using MiniSims and Four Point Probes to determine the junction depth, depth profiling and resistivity. The Spreading resistance profile (SRP) is then used to characterize the junction depth and concentration as comparison to the result obtained from MiniSim. The result shows that the junction depth and resistivity increased with the increase of temperature and longer exposure times in furnace. From the depth profiling results, it shows the existence of gallium mass in the silicon substrate with some contaminants. The results from experimental are found comparable with theoretical and simulation.
author2 Mohd Khairuddin Md Arshad (Advisor)
author_facet Mohd Khairuddin Md Arshad (Advisor)
Mohd Rosydi Zakaria
format Learning Object
author Mohd Rosydi Zakaria
author_sort Mohd Rosydi Zakaria
title Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
title_short Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
title_full Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
title_fullStr Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
title_full_unstemmed Study on diffusivity of Gallium dopant in Silicon using Spin On Dopant (SOD) technique
title_sort study on diffusivity of gallium dopant in silicon using spin on dopant (sod) technique
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1964
_version_ 1643787507002769408
score 13.211869

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