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Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices

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Main Authors: S., Makovejev, V., Kilchytska, Mohd Khairuddin, Md Arshad, D., Flandre, F., Andrieu, O., Faynot, S., Olsen, J. P., Raskin
Format: Working Paper
Language:English
Published: Institute of Electrical and Electronics Engineers (IEEE) 2011
Subjects:
Bulk silicon
Ground planes
Interface effect
Output conductance
Self-heating
Substrate effects
Thermal properties
Ultra-thin
Ultrathin body
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/14887
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spelling my.unimap-148872011-10-24T05:02:46Z Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices S., Makovejev V., Kilchytska Mohd Khairuddin, Md Arshad D., Flandre F., Andrieu O., Faynot S., Olsen J. P., Raskin Bulk silicon Ground planes Interface effect Output conductance Self-heating Substrate effects Thermal properties Ultra-thin Ultrathin body Link to publisher's homepage at http://ieeexplore.ieee.org/ Self-heating and substrate effects are discussed and qualitatively compared in the ultra-thin body ultra-thin BOX (UTB2) devices without a ground plane. Ultra-thin body is aggravating thermal properties of the devices due to the interface effects. Ultra-thin BOX (10 nm) improves heat dissipation from the channel to the bulk silicon substrate but also results in strongly pronounced substrate effects. It is observed that output conductance degradation in the UTB2 devices due to the substrate effects can be as strong as degradation due to the self-heating. 2011-10-24T05:02:45Z 2011-10-24T05:02:45Z 2011-03-14 Working Paper p. 130-133 978-1-4577-0090-3 http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5758009 http://hdl.handle.net/123456789/14887 en Proceedings of the 12th International Conference on Ultimate Integration on Silicon (ULIS 2011) Institute of Electrical and Electronics Engineers (IEEE)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Bulk silicon
Ground planes
Interface effect
Output conductance
Self-heating
Substrate effects
Thermal properties
Ultra-thin
Ultrathin body
spellingShingle Bulk silicon
Ground planes
Interface effect
Output conductance
Self-heating
Substrate effects
Thermal properties
Ultra-thin
Ultrathin body
S., Makovejev
V., Kilchytska
Mohd Khairuddin, Md Arshad
D., Flandre
F., Andrieu
O., Faynot
S., Olsen
J. P., Raskin
Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices
description Link to publisher's homepage at http://ieeexplore.ieee.org/
format Working Paper
author S., Makovejev
V., Kilchytska
Mohd Khairuddin, Md Arshad
D., Flandre
F., Andrieu
O., Faynot
S., Olsen
J. P., Raskin
author_facet S., Makovejev
V., Kilchytska
Mohd Khairuddin, Md Arshad
D., Flandre
F., Andrieu
O., Faynot
S., Olsen
J. P., Raskin
author_sort S., Makovejev
title Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices
title_short Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices
title_full Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices
title_fullStr Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices
title_full_unstemmed Self-heating and substrate effects in ultra-thin body ultra-thin BOX devices
title_sort self-heating and substrate effects in ultra-thin body ultra-thin box devices
publisher Institute of Electrical and Electronics Engineers (IEEE)
publishDate 2011
url http://dspace.unimap.edu.my/xmlui/handle/123456789/14887
_version_ 1643790836222132224
score 13.211869

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