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Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material

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書誌詳細
第一著者:	Cheong, Kuan Yew, Dr.
フォーマット:	論文
言語:	English
出版事項:	The Institution of Engineers, Malaysia 2011
主題:	Metal-oxide semiconductor (MOS) Nitrided gate oxide Silicon carbide (SiC) Nonvolatile random-access memory (NVRAM)
オンライン･アクセス:	http://dspace.unimap.edu.my/xmlui/handle/123456789/13826
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

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