MARC表示: Improvement of SiGe HBT Design and Technology Performance using Device Simulation

Improvement of SiGe HBT Design and Technology Performance using Device Simulation

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書誌詳細
第一著者:	Nurradila Ramlan
その他の著者:	Syarifah Norfaezah Sabki (Advisor)
フォーマット:	Learning Object
言語:	English
出版事項:	Universiti Malaysia Perlis 2008
主題:	SiGe technology Integrated circuits > Design and construction Semiconductors Silicon Germanium MEDICI simulations Integrated circuits > Very large scale
オンライン･アクセス:	http://dspace.unimap.edu.my/xmlui/handle/123456789/1366
タグ:	タグ追加タグなし, このレコードへの初めてのタグを付けませんか!

id	my.unimap-1366
record_format	dspace
spelling	my.unimap-13662008-07-02T07:55:39Z Improvement of SiGe HBT Design and Technology Performance using Device Simulation Nurradila Ramlan Syarifah Norfaezah Sabki (Advisor) SiGe technology Integrated circuits -- Design and construction Semiconductors Silicon Germanium MEDICI simulations Integrated circuits -- Very large scale Access is limited to UniMAP community. Simulation of the effect of various design parameters on the performance of the HBT is essential for obtaining the optimized design. This is based on the requirement for a reliable computation of the HBT performance. Accurate doping profiles are needed for determining the base resistance and related characteristics. Reliable values of bandgap narrow (BGN), effective density of states and minority and majority carrier mobilities must be determined and used. The increased spacer layer was giving the high current gain and the decrease of base layer also was giving the higher current gain. Improving current gain β will be a significant challenge as the collector and base dopant concentrations are increased. In this project, considerable work on the analysis of available data of material parameters also simulations of HBT characteristics was done with using MEDICI simulations and this work was giving the implement to improve the SiGe technology now days. 2008-07-02T07:55:39Z 2008-07-02T07:55:39Z 2007-04 Learning Object http://hdl.handle.net/123456789/1366 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution	Universiti Malaysia Perlis
building	UniMAP Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaysia Perlis
content_source	UniMAP Library Digital Repository
url_provider	http://dspace.unimap.edu.my/
language	English
topic	SiGe technology Integrated circuits -- Design and construction Semiconductors Silicon Germanium MEDICI simulations Integrated circuits -- Very large scale
spellingShingle	SiGe technology Integrated circuits -- Design and construction Semiconductors Silicon Germanium MEDICI simulations Integrated circuits -- Very large scale Nurradila Ramlan Improvement of SiGe HBT Design and Technology Performance using Device Simulation
description	Access is limited to UniMAP community.
author2	Syarifah Norfaezah Sabki (Advisor)
author_facet	Syarifah Norfaezah Sabki (Advisor) Nurradila Ramlan
format	Learning Object
author	Nurradila Ramlan
author_sort	Nurradila Ramlan
title	Improvement of SiGe HBT Design and Technology Performance using Device Simulation
title_short	Improvement of SiGe HBT Design and Technology Performance using Device Simulation
title_full	Improvement of SiGe HBT Design and Technology Performance using Device Simulation
title_fullStr	Improvement of SiGe HBT Design and Technology Performance using Device Simulation
title_full_unstemmed	Improvement of SiGe HBT Design and Technology Performance using Device Simulation
title_sort	improvement of sige hbt design and technology performance using device simulation
publisher	Universiti Malaysia Perlis
publishDate	2008
url	http://dspace.unimap.edu.my/xmlui/handle/123456789/1366
_version_	1643787267823632384
score	13.251813

Improvement of SiGe HBT Design and Technology Performance using Device Simulation

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