Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor

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Bibliographic Details
Main Authors: Saif, Ala’eddin A., Poopalan, Prabakaran, Prof. Madya
Format: Article
Language:English
Published: Elsevier Ltd. 2011
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Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/13398
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Summary:Link to publisher's homepage at http://www.elsevier.com/