Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature

Zinc Oxide (ZnO) and Magnesium Zinc Oxide (MgZnO) had received much attention in photoelectronic devices. The current study is performed to investigate the effect of temperature on the structural and optical properties of ZnO and MgZnO with 99.99% purity, deposited on Indium Tin Oxide (ITO) glass us...

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Main Authors: M. Duinong, F. P. Chee, I. Haipa, J. H. W. Chang, A. Alias, Saafie Salleh, K. A. M. Salleh
Format: Article
Language:English
English
Published: 2020
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Online Access:https://eprints.ums.edu.my/id/eprint/26660/1/Structural%20and%20Optical%20Properties%20of%20ZnO%20and%20MgZnO%20Semiconductor%20Materials%20at%20Different%20Annealing%20Temperature.pdf
https://eprints.ums.edu.my/id/eprint/26660/2/Structural%20and%20Optical%20Properties%20of%20ZnO%20and%20MgZnO%20Semiconductor%20Materials%20at%20Different%20Annealing%20Temperature1.pdf
https://eprints.ums.edu.my/id/eprint/26660/
https://doi.org/10.32802/asmscj.2020.sm26(2.20)
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spelling my.ums.eprints.266602021-01-18T07:40:59Z https://eprints.ums.edu.my/id/eprint/26660/ Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature M. Duinong F. P. Chee I. Haipa J. H. W. Chang A. Alias Saafie Salleh K. A. M. Salleh Q Science (General) Zinc Oxide (ZnO) and Magnesium Zinc Oxide (MgZnO) had received much attention in photoelectronic devices. The current study is performed to investigate the effect of temperature on the structural and optical properties of ZnO and MgZnO with 99.99% purity, deposited on Indium Tin Oxide (ITO) glass using Radio Frequency (RF) magnetron sputtering technique. The Argon flow into the chamber is 10 sccm with a deposition rate of 0.25± 0.1 kA/s, working pressure 4.5 x 10-3 Torr, gas and RF power of 100 watt. Structural analysis using X-Ray Diffraction (XRD) shows that when the temperature increase, the diffraction peak intensity and grain size increase while the deposition time at 30 minutes shows the best intensity. The grain size of ZnO and MgZnO is 0.362 nm and 0.195 nm at 300o C respectively. This shows that the full width half maximum (FWHM) of ZnO is smaller compared to MgZnO. The optical transparency value from UV-Vis spectrophotometer is 78% for ZnO while MgZnO showing 80%. This shows that optical transmittance of MgZnO is slightly higher than ZnO. 2020 Article PeerReviewed text en https://eprints.ums.edu.my/id/eprint/26660/1/Structural%20and%20Optical%20Properties%20of%20ZnO%20and%20MgZnO%20Semiconductor%20Materials%20at%20Different%20Annealing%20Temperature.pdf text en https://eprints.ums.edu.my/id/eprint/26660/2/Structural%20and%20Optical%20Properties%20of%20ZnO%20and%20MgZnO%20Semiconductor%20Materials%20at%20Different%20Annealing%20Temperature1.pdf M. Duinong and F. P. Chee and I. Haipa and J. H. W. Chang and A. Alias and Saafie Salleh and K. A. M. Salleh (2020) Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature. ASM Sc. J, 13. pp. 1-7. https://doi.org/10.32802/asmscj.2020.sm26(2.20)
institution Universiti Malaysia Sabah
building UMS Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Sabah
content_source UMS Institutional Repository
url_provider http://eprints.ums.edu.my/
language English
English
topic Q Science (General)
spellingShingle Q Science (General)
M. Duinong
F. P. Chee
I. Haipa
J. H. W. Chang
A. Alias
Saafie Salleh
K. A. M. Salleh
Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature
description Zinc Oxide (ZnO) and Magnesium Zinc Oxide (MgZnO) had received much attention in photoelectronic devices. The current study is performed to investigate the effect of temperature on the structural and optical properties of ZnO and MgZnO with 99.99% purity, deposited on Indium Tin Oxide (ITO) glass using Radio Frequency (RF) magnetron sputtering technique. The Argon flow into the chamber is 10 sccm with a deposition rate of 0.25± 0.1 kA/s, working pressure 4.5 x 10-3 Torr, gas and RF power of 100 watt. Structural analysis using X-Ray Diffraction (XRD) shows that when the temperature increase, the diffraction peak intensity and grain size increase while the deposition time at 30 minutes shows the best intensity. The grain size of ZnO and MgZnO is 0.362 nm and 0.195 nm at 300o C respectively. This shows that the full width half maximum (FWHM) of ZnO is smaller compared to MgZnO. The optical transparency value from UV-Vis spectrophotometer is 78% for ZnO while MgZnO showing 80%. This shows that optical transmittance of MgZnO is slightly higher than ZnO.
format Article
author M. Duinong
F. P. Chee
I. Haipa
J. H. W. Chang
A. Alias
Saafie Salleh
K. A. M. Salleh
author_facet M. Duinong
F. P. Chee
I. Haipa
J. H. W. Chang
A. Alias
Saafie Salleh
K. A. M. Salleh
author_sort M. Duinong
title Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature
title_short Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature
title_full Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature
title_fullStr Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature
title_full_unstemmed Structural and Optical Properties of ZnO and MgZnO Semiconductor Materials at Different Annealing Temperature
title_sort structural and optical properties of zno and mgzno semiconductor materials at different annealing temperature
publishDate 2020
url https://eprints.ums.edu.my/id/eprint/26660/1/Structural%20and%20Optical%20Properties%20of%20ZnO%20and%20MgZnO%20Semiconductor%20Materials%20at%20Different%20Annealing%20Temperature.pdf
https://eprints.ums.edu.my/id/eprint/26660/2/Structural%20and%20Optical%20Properties%20of%20ZnO%20and%20MgZnO%20Semiconductor%20Materials%20at%20Different%20Annealing%20Temperature1.pdf
https://eprints.ums.edu.my/id/eprint/26660/
https://doi.org/10.32802/asmscj.2020.sm26(2.20)
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score 13.211869