Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells
An electrical and photo-electrical characteristics of a dilute nitride GaInNAs p-i-n diode with 10-undoped quantum wells (10-QWs) were investigated at room temperature. The QWs consists of 10-nm thick and separated by 10 nm GaAs barriers. The dilute nitride-based p-i-n diode exhibits a good rectifyi...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English English |
| Published: |
2020
|
| Subjects: | |
| Online Access: | https://eprints.ums.edu.my/id/eprint/26392/1/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells.pdf https://eprints.ums.edu.my/id/eprint/26392/2/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells1.pdf https://eprints.ums.edu.my/id/eprint/26392/ https://doi.org/10.32802/asmscj.2020.sm26(2.11) |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | An electrical and photo-electrical characteristics of a dilute nitride GaInNAs p-i-n diode with 10-undoped quantum wells (10-QWs) were investigated at room temperature. The QWs consists of 10-nm thick and separated by 10 nm GaAs barriers. The dilute nitride-based p-i-n diode exhibits a good rectifying behavior and discloses that the fabricated devices has a Schottky property. The current-voltage (I-V) characteristics showed the forward-biased region of I-V curves exhibited an exponential dependence of current on applied bias, whereas the reversed-biased region shows the saturation current with negative reverse current value (leakage currents) under dark condition. As the device was exposed to photo-illumination, the electrical characteristic exhibited an increase of dark-current by four orders of magnitude to that of device under dark condition. Upon photo-illumination, there was also a shift in the threshold voltage from 0.58 V to 0.73 V. Ideality factor, n and barrier height, B are main electrical parameters were extracted using conventional forward bias I-V characteristics. The values of barrier height, which were obtained were in good agreement with other reported values. The value of n was found to be 1.95 and 28.56. Ideality factor approaches 2 indicated that fully trap-assisted recombination in quantum wells. While, high ideality factor at photo-illumination indicated that the charge transport mechanism is controlled by tunnelling emission. |
|---|