Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-i-n Diode with 10- undoped Quantum Wells
An electrical and photo-electrical characteristics of a dilute nitride GaInNAs p-i-n diode with 10-undoped quantum wells (10-QWs) were investigated at room temperature. The QWs consists of 10-nm thick and separated by 10 nm GaAs barriers. The dilute nitride-based p-i-n diode exhibits a good rectifyi...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://eprints.ums.edu.my/id/eprint/26392/1/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells.pdf https://eprints.ums.edu.my/id/eprint/26392/2/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells1.pdf https://eprints.ums.edu.my/id/eprint/26392/ https://doi.org/10.32802/asmscj.2020.sm26(2.11) |
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https://eprints.ums.edu.my/id/eprint/26392/1/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells.pdfhttps://eprints.ums.edu.my/id/eprint/26392/2/Electrical%20and%20Photo-Electrical%20Characteristics%20of%20a%20GaInNAs%20basedp-i-n%20Diode%20with%2010-%20undoped%20Quantum%20Wells1.pdf
https://eprints.ums.edu.my/id/eprint/26392/
https://doi.org/10.32802/asmscj.2020.sm26(2.11)