Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials
This study aims to design an optimal nano-dimensional channel of fin field effect transistor (FinFET) on the basis of electrical characteristics and constituent semiconductor materials (Si, GaAs, Ge, and InAs) to overcome issues regarding the shrinking of dimensions and ensure the best performance o...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universitas Ahmad Dahlan
2022
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/33376/1/Modeling%20and%20characterization%20of%20optimal%20nano-scale%20channel%20dimensions.pdf http://umpir.ump.edu.my/id/eprint/33376/ https://doi.org/10.12928/TELKOMNIKA.v20i1.21671 https://doi.org/10.12928/TELKOMNIKA.v20i1.21671 |
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