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Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials

This study aims to design an optimal nano-dimensional channel of fin field effect transistor (FinFET) on the basis of electrical characteristics and constituent semiconductor materials (Si, GaAs, Ge, and InAs) to overcome issues regarding the shrinking of dimensions and ensure the best performance o...

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Main Authors: Waheb, A.Jabbara, Ahmed, Mahmood, Sultan, Jamil
Format: Article
Language:English
Published: Universitas Ahmad Dahlan 2022
Subjects:
T Technology (General)
TA Engineering (General). Civil engineering (General)
TC Hydraulic engineering. Ocean engineering
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/33376/1/Modeling%20and%20characterization%20of%20optimal%20nano-scale%20channel%20dimensions.pdf
http://umpir.ump.edu.my/id/eprint/33376/
https://doi.org/10.12928/TELKOMNIKA.v20i1.21671
https://doi.org/10.12928/TELKOMNIKA.v20i1.21671
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spelling my.ump.umpir.333762022-12-27T08:19:59Z http://umpir.ump.edu.my/id/eprint/33376/ Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials Waheb, A.Jabbara Ahmed, Mahmood Sultan, Jamil T Technology (General) TA Engineering (General). Civil engineering (General) TC Hydraulic engineering. Ocean engineering TK Electrical engineering. Electronics Nuclear engineering This study aims to design an optimal nano-dimensional channel of fin field effect transistor (FinFET) on the basis of electrical characteristics and constituent semiconductor materials (Si, GaAs, Ge, and InAs) to overcome issues regarding the shrinking of dimensions and ensure the best performance of FinFETs. This objective has been achieved by proposing a new scaling factor, K, to simultaneously shrink the physical scaling limits of channel dimensions for various FinFETs without degrading their performance. A simulation-based comprehensive comparative study depending on four variable parameters (length, width, oxide thickness of the channel, and scaling factor) was carried out. The influence of changing channel dimensions on the performance of each type of FinFET was evaluated according to four electrical characteristics: i) ON-state/OFF-state current (ION/IOFF) ratio, ii) subthreshold swing (SS), iii) threshold voltage, and iv) drain-induced barrier lowering. The well-known multi-gate field-effect transistor (MuGFET) simulation tool for nanoscale MuGFET structure was utilized to conduct experimental simulations under the considered conditions. The obtained simulation results showed that the optimal channel dimensions for the best performance of all considered FinFET types were achieved at a minimal scaling factor K=0.125 with 5 nm length, 2.5 nm width, and 0.625 nm oxide thickness of the channel. Universitas Ahmad Dahlan 2022-02 Article PeerReviewed pdf en cc_by_sa_4 http://umpir.ump.edu.my/id/eprint/33376/1/Modeling%20and%20characterization%20of%20optimal%20nano-scale%20channel%20dimensions.pdf Waheb, A.Jabbara and Ahmed, Mahmood and Sultan, Jamil (2022) Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials. Telkomnika (Telecommunication Computing Electronics and Control), 20 (1). pp. 221-234. ISSN 1693-6930 https://doi.org/10.12928/TELKOMNIKA.v20i1.21671 https://doi.org/10.12928/TELKOMNIKA.v20i1.21671
institution Universiti Malaysia Pahang
building UMP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Pahang
content_source UMP Institutional Repository
url_provider http://umpir.ump.edu.my/
language English
topic T Technology (General)
TA Engineering (General). Civil engineering (General)
TC Hydraulic engineering. Ocean engineering
TK Electrical engineering. Electronics Nuclear engineering
spellingShingle T Technology (General)
TA Engineering (General). Civil engineering (General)
TC Hydraulic engineering. Ocean engineering
TK Electrical engineering. Electronics Nuclear engineering
Waheb, A.Jabbara
Ahmed, Mahmood
Sultan, Jamil
Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials
description This study aims to design an optimal nano-dimensional channel of fin field effect transistor (FinFET) on the basis of electrical characteristics and constituent semiconductor materials (Si, GaAs, Ge, and InAs) to overcome issues regarding the shrinking of dimensions and ensure the best performance of FinFETs. This objective has been achieved by proposing a new scaling factor, K, to simultaneously shrink the physical scaling limits of channel dimensions for various FinFETs without degrading their performance. A simulation-based comprehensive comparative study depending on four variable parameters (length, width, oxide thickness of the channel, and scaling factor) was carried out. The influence of changing channel dimensions on the performance of each type of FinFET was evaluated according to four electrical characteristics: i) ON-state/OFF-state current (ION/IOFF) ratio, ii) subthreshold swing (SS), iii) threshold voltage, and iv) drain-induced barrier lowering. The well-known multi-gate field-effect transistor (MuGFET) simulation tool for nanoscale MuGFET structure was utilized to conduct experimental simulations under the considered conditions. The obtained simulation results showed that the optimal channel dimensions for the best performance of all considered FinFET types were achieved at a minimal scaling factor K=0.125 with 5 nm length, 2.5 nm width, and 0.625 nm oxide thickness of the channel.
format Article
author Waheb, A.Jabbara
Ahmed, Mahmood
Sultan, Jamil
author_facet Waheb, A.Jabbara
Ahmed, Mahmood
Sultan, Jamil
author_sort Waheb, A.Jabbara
title Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials
title_short Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials
title_full Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials
title_fullStr Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials
title_full_unstemmed Modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials
title_sort modeling and characterization of optimal nano-scale channel dimensions for fin field effect transistor based on constituent semiconductor materials
publisher Universitas Ahmad Dahlan
publishDate 2022
url http://umpir.ump.edu.my/id/eprint/33376/1/Modeling%20and%20characterization%20of%20optimal%20nano-scale%20channel%20dimensions.pdf
http://umpir.ump.edu.my/id/eprint/33376/
https://doi.org/10.12928/TELKOMNIKA.v20i1.21671
https://doi.org/10.12928/TELKOMNIKA.v20i1.21671
_version_ 1753788555957633024
score 13.211869

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