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Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type

This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simu...

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Main Author: Hashim, Yasir
Format: Conference or Workshop Item
Language:English
Published: IOP Publishing 2017
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf
http://umpir.ump.edu.my/id/eprint/19252/
http://dx.doi.org/10.1088/1757-899X/226/1/012123
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spelling my.ump.umpir.192522017-12-07T02:31:02Z http://umpir.ump.edu.my/id/eprint/19252/ Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type Hashim, Yasir TK Electrical engineering. Electronics Nuclear engineering This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C. IOP Publishing 2017 Conference or Workshop Item PeerReviewed application/pdf en cc_by http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf Hashim, Yasir (2017) Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type. In: IOP Conference Series: Materials Science and Engineering, International Research and Innovation Summit (IRIS2017), 6-7 May 2017 , Melaka, Malaysia. pp. 1-6., 226 (012123). ISSN 1757-899X http://dx.doi.org/10.1088/1757-899X/226/1/012123 10.1088/1757-899X/226/1/012123
institution Universiti Malaysia Pahang
building UMP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Pahang
content_source UMP Institutional Repository
url_provider http://umpir.ump.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hashim, Yasir
Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
description This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C.
format Conference or Workshop Item
author Hashim, Yasir
author_facet Hashim, Yasir
author_sort Hashim, Yasir
title Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
title_short Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
title_full Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
title_fullStr Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
title_full_unstemmed Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
title_sort investigation of finfet as a temperature nano-sensor based on channel semiconductor type
publisher IOP Publishing
publishDate 2017
url http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf
http://umpir.ump.edu.my/id/eprint/19252/
http://dx.doi.org/10.1088/1757-899X/226/1/012123
_version_ 1643668635896512512
score 13.211869

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