Investigation of FinFET as a Temperature Nano-Sensor Based on Channel Semiconductor Type
This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simu...
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| Main Author: | |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IOP Publishing
2017
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/19252/1/Hashim_2017_IOP_Conf._Ser.%253A_Mater._Sci._Eng._226_012123.pdf http://umpir.ump.edu.my/id/eprint/19252/ http://dx.doi.org/10.1088/1757-899X/226/1/012123 |
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| Summary: | This paper represents the temperature effect on FinFET transistor and the possibility of using it as a temperature nano-sensor. The MuGFET simulation tool was used to investigate temperature characteristics of the FinFET. Current-voltage characteristics with different values of temperature were simulated. MOS diode connection suggested using the FinFET transistor as a temperature nano-sensor. The final results shows that the best FinFET used as a nanosensor is with GaAs because it has the greatest ∆I (=10.9%) referring to ∆I at 25o C, and the best FinFET stable with increasing working temperature is Si-FinFET because it has the lowest ∆I (=6%) referring to ∆I at 25 C. |
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