Radiation-induced degradation of silicon carbide MOSFETs - A review
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have gained significant attention due to their ability to achieve lower on-resistance, reduced switching losses, and higher switching speeds. However, when exposed to radiation-rich environments, SiC MOSFETs can exper...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
Elsevier
2024
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/47140/ https://doi.org/10.1016/j.mseb.2023.117096 |
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