Radiation-induced degradation of silicon carbide MOSFETs - A review
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have gained significant attention due to their ability to achieve lower on-resistance, reduced switching losses, and higher switching speeds. However, when exposed to radiation-rich environments, SiC MOSFETs can exper...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Published: |
Elsevier
2024
|
| Subjects: | |
| Online Access: | http://eprints.um.edu.my/47140/ https://doi.org/10.1016/j.mseb.2023.117096 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| id |
my.um.eprints.47140 |
|---|---|
| record_format |
eprints |
| spelling |
my.um.eprints.471402024-12-09T06:39:24Z http://eprints.um.edu.my/47140/ Radiation-induced degradation of silicon carbide MOSFETs - A review Baba, Tamana Siddiqui, Naseeb Ahmed Saidin, Norazlina Bte Yusoff, Siti Harwani Md Sani, Siti Fairus Abdul Karim, Julia Abdul Hasbullah, Nurul Fadzlin Q Science (General) QC Physics Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have gained significant attention due to their ability to achieve lower on-resistance, reduced switching losses, and higher switching speeds. However, when exposed to radiation-rich environments, SiC MOSFETs can experience radiation-induced charge build-up, leading to degradation and potential failure. This article provides a critical review focusing on the consequences of different types of radiation, including gamma rays, heavy ions, electrons, protons, and neutrons, on SiC MOSFETs. The impact of radiation on crucial parameters of MOSFETs such as threshold voltage, mobility, leakage current, and state resistance are discussed. The review aims to analyze in detail how radiation affects these parameters and the resulting consequences for SiC MOSFET performance. By exploring the effects of various radiation types on SiC MOSFETs, the article contributes to a comprehensive understanding of the challenges associated with radiation-induced degradation in these devices. This understanding is essential for developing strategies to mitigate the detrimental effects of radiation and enhance the reliability and performance of SiC MOSFETs in radiation-prone environments. Elsevier 2024-02 Article PeerReviewed Baba, Tamana and Siddiqui, Naseeb Ahmed and Saidin, Norazlina Bte and Yusoff, Siti Harwani Md and Sani, Siti Fairus Abdul and Karim, Julia Abdul and Hasbullah, Nurul Fadzlin (2024) Radiation-induced degradation of silicon carbide MOSFETs - A review. Materials Science and Engineering: B-Advanced Functional Solid-State Materials, 300. p. 117096. ISSN 0921-5107, DOI https://doi.org/10.1016/j.mseb.2023.117096 <https://doi.org/10.1016/j.mseb.2023.117096>. https://doi.org/10.1016/j.mseb.2023.117096 10.1016/j.mseb.2023.117096 |
| institution |
Universiti Malaya |
| building |
UM Library |
| collection |
Institutional Repository |
| continent |
Asia |
| country |
Malaysia |
| content_provider |
Universiti Malaya |
| content_source |
UM Research Repository |
| url_provider |
http://eprints.um.edu.my/ |
| topic |
Q Science (General) QC Physics |
| spellingShingle |
Q Science (General) QC Physics Baba, Tamana Siddiqui, Naseeb Ahmed Saidin, Norazlina Bte Yusoff, Siti Harwani Md Sani, Siti Fairus Abdul Karim, Julia Abdul Hasbullah, Nurul Fadzlin Radiation-induced degradation of silicon carbide MOSFETs - A review |
| description |
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have gained significant attention due to their ability to achieve lower on-resistance, reduced switching losses, and higher switching speeds. However, when exposed to radiation-rich environments, SiC MOSFETs can experience radiation-induced charge build-up, leading to degradation and potential failure. This article provides a critical review focusing on the consequences of different types of radiation, including gamma rays, heavy ions, electrons, protons, and neutrons, on SiC MOSFETs. The impact of radiation on crucial parameters of MOSFETs such as threshold voltage, mobility, leakage current, and state resistance are discussed. The review aims to analyze in detail how radiation affects these parameters and the resulting consequences for SiC MOSFET performance. By exploring the effects of various radiation types on SiC MOSFETs, the article contributes to a comprehensive understanding of the challenges associated with radiation-induced degradation in these devices. This understanding is essential for developing strategies to mitigate the detrimental effects of radiation and enhance the reliability and performance of SiC MOSFETs in radiation-prone environments. |
| format |
Article |
| author |
Baba, Tamana Siddiqui, Naseeb Ahmed Saidin, Norazlina Bte Yusoff, Siti Harwani Md Sani, Siti Fairus Abdul Karim, Julia Abdul Hasbullah, Nurul Fadzlin |
| author_facet |
Baba, Tamana Siddiqui, Naseeb Ahmed Saidin, Norazlina Bte Yusoff, Siti Harwani Md Sani, Siti Fairus Abdul Karim, Julia Abdul Hasbullah, Nurul Fadzlin |
| author_sort |
Baba, Tamana |
| title |
Radiation-induced degradation of silicon carbide MOSFETs - A review |
| title_short |
Radiation-induced degradation of silicon carbide MOSFETs - A review |
| title_full |
Radiation-induced degradation of silicon carbide MOSFETs - A review |
| title_fullStr |
Radiation-induced degradation of silicon carbide MOSFETs - A review |
| title_full_unstemmed |
Radiation-induced degradation of silicon carbide MOSFETs - A review |
| title_sort |
radiation-induced degradation of silicon carbide mosfets - a review |
| publisher |
Elsevier |
| publishDate |
2024 |
| url |
http://eprints.um.edu.my/47140/ https://doi.org/10.1016/j.mseb.2023.117096 |
| _version_ |
1818834239002509312 |
| score |
13.244413 |