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Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices

AlGaN/GaN, Metal Oxide Semiconductor High Electron Mobility Transistors (MOSHEMTs) are very attractive for high-power, high-frequency, and high-temperature applications with low gate leakage current. However, charge trapping at the insulator/AlGaN interface is believed to limit the performance of Al...

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Main Authors: Islam, N., Baharin, M. S. N. S., Rahim, A. F. A., Khan, M. F. A. J., Ghazali, N. A., Bakar, A. S. A., Mohamed, M. F. P.
Format: Article
Published: Inderscience 2024
Subjects:
QC Physics
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.um.edu.my/47088/
https://doi.org/10.1504/IJNT.2024.141758
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spelling my.um.eprints.470882024-11-22T04:24:28Z http://eprints.um.edu.my/47088/ Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices Islam, N. Baharin, M. S. N. S. Rahim, A. F. A. Khan, M. F. A. J. Ghazali, N. A. Bakar, A. S. A. Mohamed, M. F. P. QC Physics TK Electrical engineering. Electronics Nuclear engineering AlGaN/GaN, Metal Oxide Semiconductor High Electron Mobility Transistors (MOSHEMTs) are very attractive for high-power, high-frequency, and high-temperature applications with low gate leakage current. However, charge trapping at the insulator/AlGaN interface is believed to limit the performance of AlGaN/GaN MOSHEMTs. This research investigates the trapping effects of technology computer aided design (TCAD), device simulation on ``Silvaco'' Software. Thus, it is obverse that changing the donor or acceptor traps density with trap energy at the HfAlO/AlGaN interface, which impacts the ID vs. VGS, ID vs. VDS, and transconductance characteristics curve. Moreover, it also influences the interface charge, 2DEG density, and Threshold Voltage (VTH). On the contrary, varying donor or acceptor trap energy does not illustrate a significant impact on the characteristics curve because both donor and acceptor traps are fully ionised. Eventually, it is summarised that the I vs. V characteristics curve of the AlGaN/GaN, MOSHEMT, is highly influenced by the effective positive charge density at the HfAlO/AlGaN interface. Inderscience 2024 Article PeerReviewed Islam, N. and Baharin, M. S. N. S. and Rahim, A. F. A. and Khan, M. F. A. J. and Ghazali, N. A. and Bakar, A. S. A. and Mohamed, M. F. P. (2024) Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices. International Journal of Nanotechnology, 21 (4-5). ISSN 1475-7435, DOI https://doi.org/10.1504/IJNT.2024.141758 <https://doi.org/10.1504/IJNT.2024.141758>. https://doi.org/10.1504/IJNT.2024.141758 10.1504/IJNT.2024.141758
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
TK Electrical engineering. Electronics Nuclear engineering
spellingShingle QC Physics
TK Electrical engineering. Electronics Nuclear engineering
Islam, N.
Baharin, M. S. N. S.
Rahim, A. F. A.
Khan, M. F. A. J.
Ghazali, N. A.
Bakar, A. S. A.
Mohamed, M. F. P.
Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices
description AlGaN/GaN, Metal Oxide Semiconductor High Electron Mobility Transistors (MOSHEMTs) are very attractive for high-power, high-frequency, and high-temperature applications with low gate leakage current. However, charge trapping at the insulator/AlGaN interface is believed to limit the performance of AlGaN/GaN MOSHEMTs. This research investigates the trapping effects of technology computer aided design (TCAD), device simulation on ``Silvaco'' Software. Thus, it is obverse that changing the donor or acceptor traps density with trap energy at the HfAlO/AlGaN interface, which impacts the ID vs. VGS, ID vs. VDS, and transconductance characteristics curve. Moreover, it also influences the interface charge, 2DEG density, and Threshold Voltage (VTH). On the contrary, varying donor or acceptor trap energy does not illustrate a significant impact on the characteristics curve because both donor and acceptor traps are fully ionised. Eventually, it is summarised that the I vs. V characteristics curve of the AlGaN/GaN, MOSHEMT, is highly influenced by the effective positive charge density at the HfAlO/AlGaN interface.
format Article
author Islam, N.
Baharin, M. S. N. S.
Rahim, A. F. A.
Khan, M. F. A. J.
Ghazali, N. A.
Bakar, A. S. A.
Mohamed, M. F. P.
author_facet Islam, N.
Baharin, M. S. N. S.
Rahim, A. F. A.
Khan, M. F. A. J.
Ghazali, N. A.
Bakar, A. S. A.
Mohamed, M. F. P.
author_sort Islam, N.
title Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices
title_short Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices
title_full Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices
title_fullStr Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices
title_full_unstemmed Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices
title_sort analysis of the influence of the traps on the algan/gan moshemt characteristics for low leakage power devices
publisher Inderscience
publishDate 2024
url http://eprints.um.edu.my/47088/
https://doi.org/10.1504/IJNT.2024.141758
_version_ 1817841973601501184
score 13.222552

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