Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices
AlGaN/GaN, Metal Oxide Semiconductor High Electron Mobility Transistors (MOSHEMTs) are very attractive for high-power, high-frequency, and high-temperature applications with low gate leakage current. However, charge trapping at the insulator/AlGaN interface is believed to limit the performance of Al...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
Inderscience
2024
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/47088/ https://doi.org/10.1504/IJNT.2024.141758 |
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