Heteroepitaxial growth of an ultrathin β-Ga2O3 film on a sapphire substrate using mist CVD with fluid flow modeling
fi-Gallium oxide (Ga2O3) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of the fi-Ga2O3 ultrathin...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
American Chemical Society
2022
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/46181/ https://doi.org/10.1021/acsomega.2c04888 |
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