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A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester

A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.8 V to 1.4 V, with a high current...

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Main Authors: Poongan, Balamahesn, Rajendran, Jagadheswaran, Yizhi, Li, Mariappan, Selvakumar, Parameswaran, Pharveen, Kumar, Narendra, Othman, Masuri, Nathan, Arokia
Format: Article
Published: MDPI 2023
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
TP Chemical technology
Online Access:http://eprints.um.edu.my/38728/
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spelling my.um.eprints.387282024-06-12T01:01:27Z http://eprints.um.edu.my/38728/ A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester Poongan, Balamahesn Rajendran, Jagadheswaran Yizhi, Li Mariappan, Selvakumar Parameswaran, Pharveen Kumar, Narendra Othman, Masuri Nathan, Arokia TK Electrical engineering. Electronics Nuclear engineering TP Chemical technology A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.8 V to 1.4 V, with a high current efficiency of 99.98% with quiescent current of 53 mu A with the aid of an integrated low-power demultiplexer controller which consumes only 68.85 pW. The fabricated chip has an area of 0.149 mm(2) and can deliver up to 400 mA of current. The MVD-LDO's line and load regulations are 1.85 mV/V and 0.0003 mV/mA for the low-output voltage domain and 3.53 mV/V and 0.079 mV/mA for the high-output voltage domain. The LDO consumes only 174.5 mu W in standby mode, making it suitable for integrating with an RF energy harvester chip to power sensor nodes. MDPI 2023 Article PeerReviewed Poongan, Balamahesn and Rajendran, Jagadheswaran and Yizhi, Li and Mariappan, Selvakumar and Parameswaran, Pharveen and Kumar, Narendra and Othman, Masuri and Nathan, Arokia (2023) A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester. Micromachines, 14 (2). ISSN 2072-666X, DOI https://doi.org/10.3390/mi14020379 <https://doi.org/10.3390/mi14020379>. 10.3390/mi14020379
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic TK Electrical engineering. Electronics Nuclear engineering
TP Chemical technology
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
TP Chemical technology
Poongan, Balamahesn
Rajendran, Jagadheswaran
Yizhi, Li
Mariappan, Selvakumar
Parameswaran, Pharveen
Kumar, Narendra
Othman, Masuri
Nathan, Arokia
A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester
description A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.8 V to 1.4 V, with a high current efficiency of 99.98% with quiescent current of 53 mu A with the aid of an integrated low-power demultiplexer controller which consumes only 68.85 pW. The fabricated chip has an area of 0.149 mm(2) and can deliver up to 400 mA of current. The MVD-LDO's line and load regulations are 1.85 mV/V and 0.0003 mV/mA for the low-output voltage domain and 3.53 mV/V and 0.079 mV/mA for the high-output voltage domain. The LDO consumes only 174.5 mu W in standby mode, making it suitable for integrating with an RF energy harvester chip to power sensor nodes.
format Article
author Poongan, Balamahesn
Rajendran, Jagadheswaran
Yizhi, Li
Mariappan, Selvakumar
Parameswaran, Pharveen
Kumar, Narendra
Othman, Masuri
Nathan, Arokia
author_facet Poongan, Balamahesn
Rajendran, Jagadheswaran
Yizhi, Li
Mariappan, Selvakumar
Parameswaran, Pharveen
Kumar, Narendra
Othman, Masuri
Nathan, Arokia
author_sort Poongan, Balamahesn
title A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester
title_short A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester
title_full A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester
title_fullStr A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester
title_full_unstemmed A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester
title_sort 53-mu a-quiescent 400-ma load demultiplexer based cmos multi-voltage domain low dropout regulator for rf energy harvester
publisher MDPI
publishDate 2023
url http://eprints.um.edu.my/38728/
_version_ 1805881110286041088
score 13.211869

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