A 53-mu A-quiescent 400-mA load demultiplexer based CMOS multi-voltage domain low dropout regulator for RF energy harvester
A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.8 V to 1.4 V, with a high current...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Published: |
MDPI
2023
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/38728/ |
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| Summary: | A low-power capacitorless demultiplexer-based multi-voltage domain low-dropout regulator (MVD-LDO) with 180 nm CMOS technology is proposed in this work. The MVD-LDO has a 1.5 V supply voltage headroom and regulates an output from four voltage domains ranging from 0.8 V to 1.4 V, with a high current efficiency of 99.98% with quiescent current of 53 mu A with the aid of an integrated low-power demultiplexer controller which consumes only 68.85 pW. The fabricated chip has an area of 0.149 mm(2) and can deliver up to 400 mA of current. The MVD-LDO's line and load regulations are 1.85 mV/V and 0.0003 mV/mA for the low-output voltage domain and 3.53 mV/V and 0.079 mV/mA for the high-output voltage domain. The LDO consumes only 174.5 mu W in standby mode, making it suitable for integrating with an RF energy harvester chip to power sensor nodes. |
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