Dual-band doherty power amplifier with improved reactance compensation
In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the...
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| Main Authors: | , , |
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| 格式: | Article |
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Institute of Advanced Engineering and Science
2021
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| 在線閱讀: | http://eprints.um.edu.my/35586/ |
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