Dual-band doherty power amplifier with improved reactance compensation
In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the...
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| 主要な著者: | , , |
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| フォーマット: | 論文 |
| 出版事項: |
Institute of Advanced Engineering and Science
2021
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| 主題: | |
| オンライン･アクセス: | http://eprints.um.edu.my/35586/ |
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| 要約: | In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the efficiency at the back-off point from saturation output power for selected dual frequencies in the LTE bandwidth. Measurements show that the prototype board has enhanced performance at the desired frequencies, namely a saturation output power of 40.5 dBm, and 6 dB back-off efficiencies of 43 and 47, which exhibit a gain of approximately 10 dB at 0.8 GHz and 2.1 GHz, respectively. © 2021 Institute of Advanced Engineering and Science. All rights reserved. |
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