Dual-band doherty power amplifier with improved reactance compensation
In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the...
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Institute of Advanced Engineering and Science
2021
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my.um.eprints.355862023-10-30T07:21:07Z http://eprints.um.edu.my/35586/ Dual-band doherty power amplifier with improved reactance compensation Yu, Li M. Aridas, Narendra K. Latef, Tarik A. TK Electrical engineering. Electronics Nuclear engineering In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the efficiency at the back-off point from saturation output power for selected dual frequencies in the LTE bandwidth. Measurements show that the prototype board has enhanced performance at the desired frequencies, namely a saturation output power of 40.5 dBm, and 6 dB back-off efficiencies of 43 and 47, which exhibit a gain of approximately 10 dB at 0.8 GHz and 2.1 GHz, respectively. © 2021 Institute of Advanced Engineering and Science. All rights reserved. Institute of Advanced Engineering and Science 2021 Article PeerReviewed Yu, Li M. and Aridas, Narendra K. and Latef, Tarik A. (2021) Dual-band doherty power amplifier with improved reactance compensation. Indonesian Journal of Electrical Engineering and Computer Science, 23 (3). pp. 1550-1556. ISSN 2502-4752, DOI https://doi.org/10.11591/ijeecs.v23.i3.pp1550-1556 <https://doi.org/10.11591/ijeecs.v23.i3.pp1550-1556>. 10.11591/ijeecs.v23.i3.pp1550-1556 |
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TK Electrical engineering. Electronics Nuclear engineering Yu, Li M. Aridas, Narendra K. Latef, Tarik A. Dual-band doherty power amplifier with improved reactance compensation |
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In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the efficiency at the back-off point from saturation output power for selected dual frequencies in the LTE bandwidth. Measurements show that the prototype board has enhanced performance at the desired frequencies, namely a saturation output power of 40.5 dBm, and 6 dB back-off efficiencies of 43 and 47, which exhibit a gain of approximately 10 dB at 0.8 GHz and 2.1 GHz, respectively. © 2021 Institute of Advanced Engineering and Science. All rights reserved. |
| format |
Article |
| author |
Yu, Li M. Aridas, Narendra K. Latef, Tarik A. |
| author_facet |
Yu, Li M. Aridas, Narendra K. Latef, Tarik A. |
| author_sort |
Yu, Li M. |
| title |
Dual-band doherty power amplifier with improved reactance compensation |
| title_short |
Dual-band doherty power amplifier with improved reactance compensation |
| title_full |
Dual-band doherty power amplifier with improved reactance compensation |
| title_fullStr |
Dual-band doherty power amplifier with improved reactance compensation |
| title_full_unstemmed |
Dual-band doherty power amplifier with improved reactance compensation |
| title_sort |
dual-band doherty power amplifier with improved reactance compensation |
| publisher |
Institute of Advanced Engineering and Science |
| publishDate |
2021 |
| url |
http://eprints.um.edu.my/35586/ |
| _version_ |
1781704697105612800 |
| score |
13.251813 |