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Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition

Al-doped ZnO (AZO) thin films were deposited on p-Si (100) by pulsed laser deposition from a composite ceramic target (ZnO:Al2O3) by using 355 nm laser at different O2 background pressure and substrate temperature. Upon ablation at laser fluence of 2 Jcm-2, plasma plume consists of Zn neutrals and i...

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Main Authors: Kek, Reeson, Tan, Kwan Chu, Nee, Chen Hon, Yap, Seong Ling, Koh, Song Foo, Arof, Abdul Kariem, Tou, Teck Yong, Yap, Seong Shan
Format: Article
Published: IOP Publishing 2020
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/24216/
https://doi.org/10.1088/2053-1591/ab62f8
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spelling my.um.eprints.242162020-04-23T11:07:46Z http://eprints.um.edu.my/24216/ Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition Kek, Reeson Tan, Kwan Chu Nee, Chen Hon Yap, Seong Ling Koh, Song Foo Arof, Abdul Kariem Tou, Teck Yong Yap, Seong Shan QC Physics Al-doped ZnO (AZO) thin films were deposited on p-Si (100) by pulsed laser deposition from a composite ceramic target (ZnO:Al2O3) by using 355 nm laser at different O2 background pressure and substrate temperature. Upon ablation at laser fluence of 2 Jcm-2, plasma plume consists of Zn neutrals and ions, Al neutrals and O neutral are formed. As the O2 background pressure increases from 3 Pa to 26 Pa, the energy of the plasma species are moderated. The results show that the ions density and velocity reduced significantly above 13 Pa. The velocity of the ions reduced from 14 kms-1 to 11 kms-1 at 13 Pa, while the ions energy reduced from 63 eV to 42 eV respectively. Below 13 Pa, crystalline and homogeneous AZO nanostructured films were formed. Above 13 Pa, the process results in low crystallinity films with higher porosity. The resistivity of the films also increases from 0.1 ohmcm to 24 ohmcm as the pressure increased. At fixed O2 background pressure of 3 Pa, the adatom mobility of atoms on the substrates is altered by substrate heating. The resistivity of the films decreased to 10-3 ohmcm when the substrates are heated to 100 °C-300 °C during deposition. The films with highest carrier density of 1020 cm-3 and carrier mobility of 13 cmV-1 s-1 are achieved at 200 °C. © 2020 The Author(s). Published by IOP Publishing Ltd. IOP Publishing 2020 Article PeerReviewed Kek, Reeson and Tan, Kwan Chu and Nee, Chen Hon and Yap, Seong Ling and Koh, Song Foo and Arof, Abdul Kariem and Tou, Teck Yong and Yap, Seong Shan (2020) Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition. Materials Research Express, 7 (1). 016414. ISSN 2053-1591 https://doi.org/10.1088/2053-1591/ab62f8 doi:10.1088/2053-1591/ab62f8
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic QC Physics
spellingShingle QC Physics
Kek, Reeson
Tan, Kwan Chu
Nee, Chen Hon
Yap, Seong Ling
Koh, Song Foo
Arof, Abdul Kariem
Tou, Teck Yong
Yap, Seong Shan
Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition
description Al-doped ZnO (AZO) thin films were deposited on p-Si (100) by pulsed laser deposition from a composite ceramic target (ZnO:Al2O3) by using 355 nm laser at different O2 background pressure and substrate temperature. Upon ablation at laser fluence of 2 Jcm-2, plasma plume consists of Zn neutrals and ions, Al neutrals and O neutral are formed. As the O2 background pressure increases from 3 Pa to 26 Pa, the energy of the plasma species are moderated. The results show that the ions density and velocity reduced significantly above 13 Pa. The velocity of the ions reduced from 14 kms-1 to 11 kms-1 at 13 Pa, while the ions energy reduced from 63 eV to 42 eV respectively. Below 13 Pa, crystalline and homogeneous AZO nanostructured films were formed. Above 13 Pa, the process results in low crystallinity films with higher porosity. The resistivity of the films also increases from 0.1 ohmcm to 24 ohmcm as the pressure increased. At fixed O2 background pressure of 3 Pa, the adatom mobility of atoms on the substrates is altered by substrate heating. The resistivity of the films decreased to 10-3 ohmcm when the substrates are heated to 100 °C-300 °C during deposition. The films with highest carrier density of 1020 cm-3 and carrier mobility of 13 cmV-1 s-1 are achieved at 200 °C. © 2020 The Author(s). Published by IOP Publishing Ltd.
format Article
author Kek, Reeson
Tan, Kwan Chu
Nee, Chen Hon
Yap, Seong Ling
Koh, Song Foo
Arof, Abdul Kariem
Tou, Teck Yong
Yap, Seong Shan
author_facet Kek, Reeson
Tan, Kwan Chu
Nee, Chen Hon
Yap, Seong Ling
Koh, Song Foo
Arof, Abdul Kariem
Tou, Teck Yong
Yap, Seong Shan
author_sort Kek, Reeson
title Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition
title_short Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition
title_full Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition
title_fullStr Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition
title_full_unstemmed Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition
title_sort effects of pressure and substrate temperature on the growth of al-doped zno films by pulsed laser deposition
publisher IOP Publishing
publishDate 2020
url http://eprints.um.edu.my/24216/
https://doi.org/10.1088/2053-1591/ab62f8
_version_ 1665895221015085056
score 13.211869

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