Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC
In this paper, the effect of post deposition annealing (PDA) on the chemical, structural, and electrical properties of the high-k Y 2 O 3 /Al 2 O 3 stacking dielectric on p-type 4H-SiC were studied. High-k dielectric provides a physically thicker film with equivalent capacitance, therefore better ex...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| 格式: | Article |
| 出版: |
Elsevier
2019
|
| 主题: | |
| 在线阅读: | http://eprints.um.edu.my/22899/ https://doi.org/10.1016/j.matlet.2019.03.009 |
| 标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
成为第一个发表评论!